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Micro-fabricated ion traps for Quantum Information Processing; Highlights and lessons learned

Maunz, Peter L.; Blume-Kohout, Robin J.; Blain, Matthew G.; Benito, Francisco B.; Berry, Christopher W.; Clark, Craig R.; Clark, Susan M.; Colombo, Anthony P.; Dagel, Amber L.; Fortier, Kevin M.; Haltli, Raymond A.; Heller, Edwin J.; Lobser, Daniel L.; Mizrahi, Jonathan M.; Nielsen, Erik N.; Resnick, Paul J.; Rembetski, John F.; Rudinger, Kenneth M.; Scrymgeour, David S.; Sterk, Jonathan D.; Tabakov, Boyan T.; Tigges, Chris P.; Van Der Wall, Jay W.; Stick, Daniel L.

Abstract not provided.

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TYPE Conference Poster YEAR 2016
OSTI

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

AIP Advances

Laroche, D.; Huang, S.H.; Nielsen, Erik N.; Chuang, Y.; Li, J.Y.; Liu, C.W.; Lu, Tzu-Ming L.

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

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TYPE Journal Article YEAR 2015
ScopusOSTIDOI
Results 51–75 of 156
Results 51–75 of 156