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Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew L.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Doyle, Barney L.; Wolfley, Steven L.; Dodd, Paul E.; Shaneyfelt, Marty R.; McLain, Michael L.; Marinella, Matthew J.

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

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TYPE Presentation YEAR 2014
ScopusOSTI

Characterization of Switching Filament Formation in TaOx Memristive Memory Films

Marinella, Matthew J.; Marinella, Matthew J.; Howell, Stephen W.; Howell, Stephen W.; Decker, Seth D.; Decker, Seth D.; Hughart, David R.; Hughart, David R.; Lohn, Andrew L.; Lohn, Andrew L.; Mickel, Patrick R.; Mickel, Patrick R.; Apodaca, Roger A.; Apodaca, Roger A.; Bielejec, Edward S.; Bielejec, Edward S.; Beechem, Thomas E.; Beechem, Thomas E.; Wolfley, Steven L.; Wolfley, Steven L.; Stevens, James E.; Brennecka, Geoffrey L.

Abstract not provided.

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TYPE Presentation YEAR 2014
OSTI
Results 151–175 of 249
Results 151–175 of 249