Modeling Single Event Effects in GaAs and GaN Devices from 14 MeV Neutron-Induced Photocurrent Pulses
Abstract not provided.
Publications
Epitaxial AlAsSb for spectroscopic gamma detectors
Abstract not provided.
Single Atom Implantation for Quantum Devices and Materials
Abstract not provided.
Nanoscale Patterning of Quantum Emitters in Diamond via Focused Ion Beam
Abstract not provided.
Effect of 14 MeV neutron flux on defects in Si photodiode devices
Abstract not provided.
Investigation of the effect of flux on defects created in Su devices
Abstract not provided.
Fabrication of Single Atom Devices by Direct Write Nanofabrication
Abstract not provided.
Short Intense Ion Pulses for Radiation Effects Research Using NDCX-II and BELLA-i
Abstract not provided.
TARGET PERFORMANCE FOR 14 MEV NEUTRON PRODUCTION AT THE SANDIA ION BEAM LABORATORY
Abstract not provided.
Quantum Sensed Nuclear Magnetic Resonance Discovery Platform
Abstract not provided.
Controlling the coherence of a diamond spin qubit through its strain environment
Nature Communications
The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. For quantum bits in the solid state, decoherence from thermal vibrations of the surrounding lattice can typically only be suppressed by lowering the temperature of operation. Here, we use a nano-electro-mechanical system to mitigate the effect of thermal phonons on a spin qubit - the silicon-vacancy colour centre in diamond - without changing the system temperature. By controlling the strain environment of the colour centre, we tune its electronic levels to probe, control, and eventually suppress the interaction of its spin with the thermal bath. Strain control provides both large tunability of the optical transitions and significantly improved spin coherence. Finally, our findings indicate the possibility to achieve strong coupling between the silicon-vacancy spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.
ReRAM: Fabrication Characterization and Radiation Effects
Abstract not provided.
Fabrication of Single Atom Devices by Direct Write Nanofabrication
Abstract not provided.
Radiation Effects and Nanofabrication
Abstract not provided.
Spin Coherence and Optical Properties of the Si Vacancy in SiC
Abstract not provided.
Overview of Techniques for Single Atom Implantation
Abstract not provided.
Single Donor Implantation for Qubit Research
Abstract not provided.
Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation
Abstract not provided.
Focused Ion Beam Implantation Capability
Abstract not provided.
Single Defect Centers in Wide Bandgap Materials
Abstract not provided.
Electro-optical Control over SiV Center Emission in Diamond
Our goal was to develop an integrated platform for electrical control of SiV defects in diamond. The understanding and techniques we discover for electrical control have direct relevance for scalable color center based devices. More fundamentally, they can serve as a basis for developing diamond light sources and exploring color center transitions previously understood as inaccessible. While we did not meet all these goals we did develop a unique set of capabilities that allowed Sandia to distinct itself both internally and through continuing external collaborations.
Microwave Based Lifetime Measurements and Analysis for Detector Materials
Abstract not provided.
Effect of Flux on the Defects and Electrical Behavior in Si Devices irradiated with He Ions
Abstract not provided.
Effects of Heavy Ion Radiation on the Classification Accuracy After Training of a TaOx Hardware Based Neural Network
Abstract not provided.
Effect of Flux on the Defects and Gain Degradation in pnp Si BJTs irradiated with He ions
Abstract not provided.
Results 51–75 of 249