Lithographic Quantum Dots: Modeling and Analog Quantum Simulation
Abstract not provided.
Publications
Analyzing the fidelity of a singlet-triplet spin-orbit qubit in silicon using gate set tomography
Abstract not provided.
Hole Spin Qubits in Germanium
Abstract not provided.
Implications of the spin-orbit interaction for singlet-triplet qubits in silicon
Abstract not provided.
Single and Double Hole Quantum Dots in Ge/SiGe Quantum Wells
Abstract not provided.
Spin Qubits Using Holes in Strained Germanium Quantum Well Heterostructures
Abstract not provided.
AC controlled spin-orbit qubits
Abstract not provided.
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure
Applied Physics Letters
Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.
Spin Qubits Using Holes in Strained Germanium Quantum Well Heterostructures
Abstract not provided.
Generalized model for tuning tunnel rates in a silicon quantum dot
Abstract not provided.
Si quantum dots with focused ion beam implanted phosphorus donors
Abstract not provided.
Demonstration of a Hole Quantum dot in Ge/SiGe
Abstract not provided.
Ion implantation for deterministic single atom devices
Review of Scientific Instruments
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
A study of device designs for coherent donordot coupling in Si-MOS nanostructures
Abstract not provided.
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure
Abstract not provided.
Quantum Control of Single Spins
Abstract not provided.
Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure
Abstract not provided.
A Multi-Qubit Testbed using Silicon Quantum Dots
Abstract not provided.
AC control and gate set tomography of a S-T qubit
Abstract not provided.
Direct Write Nanofabrication for Quantum Computing in Silicon and Color Centers in Diamond
Abstract not provided.
Top-down Direct Write Nanofabrication of Donors in Silicon and Defect Centers in Diamond
Abstract not provided.
Top-down Direct Write Nanofabrication of Donors in Silicon and Defect Centers in Diamond
Abstract not provided.
BES: Artificial Hubbard Materials
Abstract not provided.
Fabrictaion of Counted Donor Devices using Top-Down Ion Implantation
Abstract not provided.
Fabrication of Quantum Dots in Undoped SiGe with a single metal layer
Abstract not provided.
Results 26–50 of 84