Structural disorder causes materials’ surface electronic properties, e.g., work function ([Formula: see text]), to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g., roughness or granularity. For polycrystalline Pt, nanoscale resolution photoemission threshold mapping reveals a spatially varying [Formula: see text] eV over a distribution of (111) vicinal grain surfaces prepared by sputter deposition and annealing. With regard to field emission and related phenomena, e.g., vacuum arc initiation, a salient feature of the [Formula: see text] distribution is that it is skewed with a long tail to values down to 5.4 eV, i.e., far below the mean, which is exponentially impactful to field emission via the Fowler–Nordheim relation. We show that the [Formula: see text] spatial variation and distribution can be explained by ensemble variations of granular tilts and surface slopes via a Smoluchowski smoothing model wherein local [Formula: see text] variations result from spatially varying densities of electric dipole moments, intrinsic to atomic steps, that locally modify [Formula: see text]. Atomic step-terrace structure is confirmed with scanning tunneling microscopy (STM) at several locations on our surfaces, and prior works showed STM evidence for atomic step dipoles at various metal surfaces. From our model, we find an atomic step edge dipole [Formula: see text] D/edge atom, which is comparable to values reported in studies that utilized other methods and materials. Our results elucidate a connection between macroscopic [Formula: see text] and the nanostructure that may contribute to the spread of reported [Formula: see text] for Pt and other surfaces and may be useful toward more complete descriptions of polycrystalline metals in the models of field emission and other related vacuum electronics phenomena, e.g., arc initiation.
While it is likely practically a bad idea to shrink a transistor to the size of an atom, there is no arguing that it would be fantastic to have atomic-scale control over every aspect of a transistor – a kind of crystal ball to understand and evaluate new ideas. This project showed that it was possible to take a niche technique used to place dopants in silicon with atomic precision and apply it broadly to study opportunities and limitations in microelectronics. In addition, it laid the foundation to attaining atomic-scale control in semiconductor manufacturing more broadly.
The stability of low-index platinum surfaces and their electronic properties is investigated with density functional theory, toward the goal of understanding the surface structure and electron emission, and identifying precursors to electrical breakdown, on nonideal platinum surfaces. Propensity for electron emission can be related to a local work function, which, in turn, is intimately dependent on the local surface structure. The (1×N) missing row reconstruction of the Pt(110) surface is systematically examined. The (1×3) missing row reconstruction is found to be the lowest in energy, with the (1×2) and (1×4) slightly less stable. In the limit of large (1×N) with wider (111) nanoterraces, the energy accurately approaches the asymptotic limit of the infinite Pt(111) surface. This suggests a local energetic stability of narrow (111) nanoterraces on free Pt surfaces that could be a common structural feature in the complex surface morphologies, leading to work functions consistent with those on thermally grown Pt substrates.
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. Here, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.
Scanning Microwave Impedance Microscopy (sMIM) is a sensitive electrical measurement technique which can characterize local static and temporal variations of electrical permittivity, and conductivity of materials and devices as well as for failure analysis. It is being used to characterize dielectrics, semiconductors and their doping response, and metals. Measurements can be made at room temperature down to cryogenic temperatures where quantum effects become important. Leveraging near-field electrical interactions between a probe and the sample, sMIM can measure and image electrical properties and operation at the nanoscale to micron scale by incorporation into an atomic force microscope. sMIM is being applied to a wide range of industrial and scientific applications to improve fundamental and functional understanding and operational performance of advanced, exploratory and quantum electronic devices and materials and their fabrication.
In most models of vacuum breakdown, there is some initial emission of electrons from the cathodic surface, usually employing some form of Fowler-Nordheim emission. While this may be correct for 'textbook' surfaces, it is generally unreliable for real surfaces and fitted parameters are often used. For example, the beta employed is generally unphysical based on usual definitions (e.g., it incorporates more, but unexplained, physics than just a geometry-based field concentration effect). In this work, we describe experimental efforts to better characterize which surface structure parameters influence the vacuum field emission current.
We report on the fabrication and characterization of nanocrystalline ZnO films for use as a random laser physical unclonable function (PUF). Correlation between processing conditions and film microstructure will be made to optimize the lasing properties and random response. We will specifically examine the repeatability and security of PUFs demonstrated in this novel 3 system. This demonstration has promise to impact many of Sandia's core missions including counterfeit detection. 4 4
We present simulation results quantitatively showing that circularly polarized light persists in transmission through several real-world and model fog environments better than linearly polarized light over broad wavelength ranges from the visible through the infrared. We present results for polydisperse particle distributions from realistic and measured fog environments, comparing the polarization persistence of linear and circular polarization. Using a polarization-tracking Monte Carlo program, we simulate polarized light propagation through four MODTRAN fog models (moderate and heavy radiation fog and moderate and heavy advection fog) and four real-world measured fog particle distributions (Garland measured radiation and advection fogs, Kunkel measured advection fog, and Sandia National Laboratories’ Fog Facility’s fog). Simulations were performed for each fog environment with wavelengths ranging from 0.4 to 12 μm for increasing optical thicknesses of 5, 10, and 15 (increasing fog density or sensing range). Circular polarization persists superiorly for all optical wavelength bands from the visible to the long-wave infrared in nearly all fog types for all optical thicknesses. Throughout our analysis, we show that if even a small percentage of a fog’s particle size distribution is made up of large particles, those particles dominate the scattering process. In nearly all real-world fog situations, these large particles and their dominant scattering characteristics are present. Larger particles are predominantly forward-scattering and contribute to circular polarization’s persistence superiority over broad wavelength ranges and optical thicknesses/ range. Circularly polarized light can transmit over 30% more signal in its intended state compared to linearly polarized light through real-world fog environments. This work broadens the understanding of how circular polarization persists through natural fog particle distributions with natural variations in mode particle radius and single or bimodal characteristics.
Charge-transfer materials based on the self-assembly of aromatic donor–acceptor complexes enable a modular organic-synthetic approach to develop and fine-tune electronic and optical properties, and thus these material systems stand to impact a wide range of technologies. Through laser-induction of temperature gradients, in this study, user-defined patterning of strongly dichroic and piezoelectric organic thin films composed of donor–acceptor columnar liquid crystals is shown. Fine, reversible control over isotropic versus anisotropic regions in thin films is demonstrated, enabling noncontact writing/rewriting of micropolarizers, bar codes, and charge-transfer based devices.
Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).