Publications

Results 76–100 of 124
Skip to search filters

The susceptibility of TaOx-based memristors to high dose rate ionizing radiation and total ionizing dose

IEEE Transactions on Nuclear Science

McLain, Michael L.; Hjalmarson, Harold P.; Sheridan, Timothy J.; Mickel, Patrick R.; Hanson, Donald J.; McDonald, Joseph K.; Hughart, David R.; Marinella, Matthew J.

This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaOx) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 × 107rad(Si)/s to 4.7 × 108rad(Si)/s and for pulse widths ranging from 50 ns to 50 μs. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of ∼3.0 × 108rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaOx memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. Numerical simulations are used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages.

More Details
TYPE Journal Article YEAR 2014
ScopusOSTIDOI

Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew L.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Doyle, Barney L.; Wolfley, Steven L.; Dodd, Paul E.; Shaneyfelt, Marty R.; McLain, Michael L.; Marinella, Matthew J.

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

More Details
TYPE Presentation YEAR 2014
ScopusOSTI

Characterization of Switching Filament Formation in TaOx Memristive Memory Films

Marinella, Matthew J.; Marinella, Matthew J.; Howell, Stephen W.; Howell, Stephen W.; Decker, Seth D.; Decker, Seth D.; Hughart, David R.; Hughart, David R.; Lohn, Andrew L.; Lohn, Andrew L.; Mickel, Patrick R.; Mickel, Patrick R.; Apodaca, Roger A.; Apodaca, Roger A.; Bielejec, Edward S.; Bielejec, Edward S.; Beechem, Thomas E.; Beechem, Thomas E.; Wolfley, Steven L.; Wolfley, Steven L.; Stevens, James E.; Brennecka, Geoffrey L.

Abstract not provided.

More Details
TYPE Presentation YEAR 2014
OSTI

Development characterization and modeling of a TaOx ReRAM for a neuromorphic accelerator

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

This report discusses aspects of neuromorphic computing and how it is used to model microsystems.

More Details
TYPE Conference Poster YEAR 2014
OSTIDOI
Results 76–100 of 124
Results 76–100 of 124