Publications

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Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one-and two-dimensional materials and devices.

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The metal organic framework material Ni₃(2,3,6,7,10,11 - hexaiminotriphenylene)₂, (Ni₃(HITP)₂) is composed of layers of extended conjugated planes analogous to graphene. We carried out Density functional theory (DFT) calculations to model the electronic structure of bulk and monolayer Ni₃(HITP)₂. The layered 3D material is metallic, similar to graphene. Our calculations predict that there is appreciable band dispersion not only in-plane, but perpendicular to the stacking planes as well, suggesting that, unlike graphene, the conductivity may be nearly isotropic. In contrast, a 2D monolayer of the material exhibits a band gap, consistent with previously published results. Insight obtained from studies of the evolution of the material from semiconducting to metallic as the material is transitioned from 2D to 3D suggests the possibility of modifying the material to render it semiconducting by changing the metal center and inserting spacer moieties between the layers. Furthermore, the DFT calculations predict that the modified material will be structurally stable and exhibit a band gap.

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Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

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Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fermi level is located in the conduction band, leading to n-type Ohmic contact to the first quintuplet. Furthermore, we find strong charge transfer and band bending in the first few quintuplets, with no Schottky barrier for charge injection even when the topological insulator is undoped. Our calculations indicate that Au and graphene leave the spin-momentum locking mostly unaltered, but on the other hand, Ni, Pd, and Pt strongly hybridize with Bi2Se3 and relax spin-momentum locking. Our results indicate that judicious choice of the contact metal is essential to reveal the unique surface features of topological insulators. © 2014 American Physical Society.

Renormalization of quasiparticles and excitons in carbon nanotubes (CNTs) near a metallic surface has been studied within a many-body formalism using an embedding approach newly implemented in the GW and Bethe-Salpeter methods. The quasiparticle band-gap renormalization in semiconducting CNTs is found to scale as -1/(2ha), with ha the apparent nanotube height, and it can exceed half an eV. Also, the binding energy of excitons is reduced dramatically - by as much as 75% - near the surface. Compensation between quasiparticle and excitonic effects results in small changes in the optical gap. The important role played by the nanotube screening response in establishing these effects is emphasized and a simple electrostatic model with no adjustable parameters explains the results of state-of-the-art calculations and generalizes them to a large variety of CNTs. © 2013 American Physical Society.

We present many-body ab initio calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle band gaps and is combined with the Bethe-Salpeter equation to obtain the optical absorption spectrum. We find that the dependence of the electronic band gaps on strain is more complex than previously predicted based on tight-binding models or density functional theory. In addition, we show that the exciton energy and exciton binding energy depend significantly on strain, with variations of tens of milli-electron-volts per percent strain, but despite these strong changes the absorbance is found to be nearly independent of strain. Our results provide new guidance for the understanding and design of optomechanical systems based on carbon nanotubes. © 2013 American Physical Society.

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The low-energy properties of the Anderson model for a single impurity coupled to two leads are studied using the GW approximation. We find that quantities such as the spectral function at zero temperature, the linear-response conductance as function of temperature or the differential conductance as function of bias voltage exhibit universal scaling behavior in the Kondo regime. We show how the form of the GW scaling functions relates to the form of the scaling functions obtained from the exact solution at equilibrium. We also compare the energy scale that goes inside the GW scaling functions with the exact Kondo temperature, for a broad range of the Coulomb interaction strength in the asymptotic regime. This analysis allows to clarify a presently suspended question in the literature, namely whether or not the GW solution captures the Kondo resonance.

Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

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