A Ka-band RF MEMS enabled frequency reconfigurable triangular microstrip patch antenna has been designed for monolithic integration with RF MEMS phase shifters to demonstrate a low-cost monolithic passive electronically scanned array (PESA). This paper introduces our first prototype reconfigurable triangular patch antenna currently in fabrication. The aperture coupled patch antenna is fabricated on a dual-layer quartz/alumina substrate using surface micromachining techniques.
Low-temperature co-fired ceramic (LTCC) enables development and testing of critical elements on microsystem boards as well as nonmicroelectronic meso-scale applications. We describe silicon-based microelectromechanical systems packaging and LTCC meso-scale applications. Microfluidic interposers permit rapid testing of varied silicon designs. The application of LTCC to micro-high-performance liquid chromatography (?-HPLC) demonstrates performance advantages at very high pressures. At intermediate pressures, a ceramic thermal cell lyser has lysed bacteria spores without damaging the proteins. The stability and sensitivity of LTCC/chemiresistor smart channels are comparable to the performance of silicon-based chemiresistors. A variant of the use of sacrificial volume materials has created channels, suspended thick films, cavities, and techniques for pressure and flow sensing. We report on inductors, diaphragms, cantilevers, antennae, switch structures, and thermal sensors suspended in air. The development of 'functional-as-released' moving parts has resulted in wheels, impellers, tethered plates, and related new LTCC mechanical roles for actuation and sensing. High-temperature metal-to-LTCC joining has been developed with metal thin films for the strong, hermetic interfaces necessary for pins, leads, and tubes.
Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.