Optical waveguide propagation loss due to sidewall roughness, material impurity and inhomogeneity has been the focus of many studies in fabricating planar lightwave circuits (PLC's)1,2,3 In this work, experiments were carried out to identify the best fabrication process for reducing propagation loss in single mode waveguides comprised of silicon nitride core and silicon dioxide cladding material. Sidewall roughness measurements were taken during the fabrication of waveguide devices for various processing conditions. Several fabrication techniques were explored to reduce the sidewall roughness and absorption in the waveguides. Improvements in waveguide quality were established by direct measurement of waveguide propagation loss. The lowest linear waveguide loss measured in these buried channel waveguides was 0.1 dB/cm at a wavelength of 1550 nm. This low propagation loss along with the large refractive index contrast between silicon nitride and silicon dioxide enables high density integration of photonic devices and small PLC's for a variety of applications in photonic sensing and communications.
We report a fully integrated high-Q factor micro-ring resonator using silicon nitride/dioxide on a silicon wafer. The micro-ring resonator is critically coupled to a low loss straight waveguide. An intrinsic quality factor of 2.4 x 10{sup 5} has been measured.
This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.
Optical switches based on deflection of a waveguide element offer low crosstalk, low polarization dependency, low power consumption, and high degree of integration. Such switches made by post processing of polymeric waveguides onto MEMS structures of silicon-on-insulator (SOI) efficiently combine low loss waveguides with the exceptional mechanical properties of single crystalline silicon. An important aspect of this concept is that it allows independent optimization of the mechanical and optical structures by efficiently separating the two. Well established, high yield methods exist for structuring silicon based on deep reactive ion etching (DRIE), which allows the formation of mechanical structures with high aspect ratio. The mechanical structure can then be planarized for further processing by utilizing spin coating properties of certain polymers. This allows post processing of high-resolution passive polymeric waveguide networks that can fulfil a variety of functions depending on the application, including spot-size transformers for low loss coupling to optical fibers. These waveguides can also potentially be integrated with CMOS or active optoelectronic elements into forming highly functional hybrid photonic integrated circuits, partly facilitated by the low temperatures required for processing of polymers. This paper highlights key process technologies and specifically discusses issues related to an optical switch that was developed for proof of concept. This switch was made of 5μm thick SOI with 3μm wide, high optical confinement polymeric waveguides. Switching times were down to 30μs, switching voltages 20 to 50V, and crosstalk was -32dB. The paper further outlines possible applications of the switch to state-of-the-art problems in photonics.
This report describes the research accomplishments achieved under the LDRD Project ''High-Bandwidth Optical Data Interconnects for Satellite Applications.'' The goal of this LDRD has been to address the future needs of focal-plane-array (FPA) sensors by exploring the use of high-bandwidth fiber-optic interconnects to transmit FPA signals within a satellite. We have focused primarily on vertical-cavity surface-emitting laser (VCSEL) based transmitters, due to the previously demonstrated immunity of VCSELs to total radiation doses up to 1 Mrad. In addition, VCSELs offer high modulation bandwidth (roughly 10 GHz), low power consumption (roughly 5 mW), and high coupling efficiency (greater than -3dB) to optical fibers. In the first year of this LDRD, we concentrated on the task of transmitting analog signals from a cryogenic FPA to a remote analog-to-digital converter. In the second year, we considered the transmission of digital signals produced by the analog-to-digital converter to a remote computer on the satellite. Specifically, we considered the situation in which the FPA, analog-to-digital converter, and VCSEL-based transmitter were all cooled to cryogenic temperatures. This situation requires VCSELs that operate at cryogenic temperature, dissipate minimal heat, and meet the electrical drive requirements in terms of voltage, current, and bandwidth.
Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.
We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.
Current copper backplane technology has reached the technical limits of clock speed and width for systems requiring multiple boards. Currently, bus technology such as VME and PCI (types of buses) will face severe limitations are the bus speed approaches 100 MHz. At this speed, the physical length limit of an unterminated bus is barely three inches. Terminating the bus enables much higher clock rates but at drastically higher power cost. Sandia has developed high bandwidth parallel optical interconnects that can provide over 40 Gbps throughput between circuit boards in a system. Based on Sandia's unique VCSEL (Vertical Cavity Surface Emitting Laser) technology, these devices are compatible with CMOS (Complementary Metal Oxide Semiconductor) chips and have single channel bandwidth in excess of 20 GHz. In this project, we are researching the use of this interconnect scheme as the physical layer of a greater ATM (Asynchronous Transfer Mode) based backplane. There are several advantages to this technology including small board space, lower power and non-contact communication. This technology is also easily expandable to meet future bandwidth requirements in excess of 160 Gbps sometimes referred to as UTOPIA 6. ATM over optical backplane will enable automatic switching of wide high-speed circuits between boards in a system. In the first year we developed integrated VCSELs and receivers, identified fiber ribbon based interconnect scheme and a high level architecture. In the second year, we implemented the physical layer in the form of a PCI computer peripheral card. A description of future work including super computer networking deployment and protocol processing is included.