Publications

Bufford, Daniel C.; Steckbeck, Mackenzie K.; Doyle, Barney L.; Buller, Daniel L.; Hattar, Khalid M.

Abstract not provided.

Bufford, Daniel C.; Mackenzie Steckbeck, Mackenzie S.; Doyle, Barney L.; Buller, Daniel L.; Hattar, Khalid M.

Abstract not provided.

IEEE Transactions on Nuclear Science

Dodds, N.A.; Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Doyle, Barney L.; Trinczek, M.; Blackmore, E.W.; Rodbell, K.P.; Gordon, M.S.; Reed, R.A.; Pellish, J.A.; LaBel, K.A.; Marshall, P.W.; Swanson, Scot E.; Vizkelethy, Gyorgy V.; Van Deusen, Stuart B.; Sexton, Frederick W.; Martinez, Marino M.

The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. We show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew L.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Doyle, Barney L.; Wolfley, Steven L.; Dodd, Paul E.; Shaneyfelt, Marty R.; McLain, Michael L.; Marinella, Matthew J.

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

Doyle, Barney L.

This report documents theoretical calculations of displacement damage produced by gamma rays and neutrons on various materials. The average energy of the gamma rays was 1.24 MeV and 1.0 MeV for the neutrons. The fluence of the gamma rays was 1.2e14 γ/cm² , for the neutrons it was 1.0e12 n/cm2. The initial materials of interest were Au and Se. The total doses of the gamma ray exposures were in the 100 kRad range for both elements. An equivalent electron fluence was approximated to be the same as the gamma ray fluence over one gamma ray attenuation length in both materials and at the same 1.24 MeV energy. The maximum recoil energy of the Au and Se for these electrons was calculated relativisticaly to be 29 and 72 eV respectively. The relativisitic McKinley and Feshbach theory for the atomic recoil cross sections produced by the electrons were in the 10s of mbarn range and an upper limit for the concentration of Frenkel pairs for the gamma ray exposures for both elements was in the ppb range. The Robinson Energy Partioning Theory for non-ionizing energy loss (NIEL) of ions in solids was used to calculate the concentration of Frenkel pairs produced by the 1 MeV neutrons, and this concentration was also in the ppb range for both Au and Se. Low damage levels like this can have effects on minority carrier recombination in semiconductors, but are not expected to have any effect on metals like Au, or metalloids such as Se.

Doyle, Barney L.; Nguyen, Anh N.

Abstract not provided.

Doyle, Barney L.; Corona, Aldo C.; Nguyen, Anh N.

A MS Excel program has been written that calculates accidental, or unintentional, ion channeling in cubic bcc, fcc and diamond lattice crystals or polycrystalline materials. This becomes an important issue when simulating the creation by energetic neutrons of point displacement damage and extended defects using beams of ions. All of the tables and graphs in the three Ion Beam Analysis Handbooks that previously had to be manually looked up and read from were programed into Excel in handy lookup tables, or parameterized, for the case of the graphs, using rather simple exponential functions with different powers of the argument. The program then offers an extremely convenient way to calculate axial and planar half-angles and minimum yield or dechanneling probabilities, effects on half-angles of amorphous overlayers, accidental channeling probabilities for randomly oriented crystals or crystallites, and finally a way to automatically generate stereographic projections of axial and planar channeling half-angles. The program can generate these projections and calculate these probabilities for axes and [hkl] planes up to (555).

Nguyen, Anh N.; Doyle, Barney L.

Abstract not provided.

Doyle, Barney L.; Steckbeck, Mackenzie K.

Several radiation effects projects in the Ion Beam Lab (IBL) have recently required two disparate charged particle beams to simultaneously strike a single sample through a single port of the target chamber. Because these beams have vastly different mass–energy products (MEP), the low-MEP beam requires a large angle of deflection toward the sample by a bending electromagnet. A second electromagnet located further upstream provides a means to compensate for the small angle deflection experienced by the high-MEP beam during its path through the bending magnet. This paper derives the equations used to select the magnetic fields required by these two magnets to achieve uniting both beams at the target sample. A simple result was obtained when the separation of the two magnets was equivalent to the distance from the bending magnet to the sample, and the equation is given by: B_s= 1/2(r_c/r_s) B_c, where B_s and B_c are the magnetic fields in the steering and bending magnet and r_c/r_s is the ratio of the radii of the bending magnet to that of the steering magnet. This result is not dependent upon the parameters of the high MEP beam, i.e. energy, mass, charge state. Therefore, once the field of the bending magnet is set for the low-MEP beam, and the field in the steering magnet is set as indicted in the equation, the trajectory path of any high-MEP beam will be directed into the sample.

Bufford, Daniel C.; Steckbeck, Mackenzie S.; Doyle, Barney L.; Buller, Daniel L.; Hattar, Khalid M.

Abstract not provided.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Lohn, Andrew J.; Doyle, Barney L.; Stein, Gregory J.; Mickel, Patrick R.; Stevens, James E.; Marinella, Matthew J.

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. The technique is applied to tantalum oxide memristors but can be extended to a wide range of materials systems. © 2014 Published by Elsevier B.V.

Dodds, Nathaniel A.; Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Doyle, Barney L.; Trinczek, M.C.; Blackmore, E.W.; Rodbell, K.P.; Reed, R.A.; Pellish, J.A.; LaBel, K.A.; Marshall, P.W.; Swanson, Scot E.; Vizkelethy, Gyorgy V.; Dodds, Nathaniel A.; Van Deusen, Stuart B.

Abstract not provided.

Dodds, Nathaniel A.; Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Doyle, Barney L.; Trinczek, M.C.; Blackmore, E.W.; Rodbell, K.P.; Reed, R.A.; Pellish, J.A.; LaBel, K.A.; Marshall, P.W.; Swanson, Scot E.; Vizkelethy, Gyorgy V.; Van Deusen, Stuart B.

Abstract not provided.

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew L.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Doyle, Barney L.; Wolfley, Steven L.; Dodd, Paul E.; Shaneyfelt, Marty R.; McLain, Michael L.; Marinella, Matthew J.

Abstract not provided.

Auden, Elizabeth C.; Doyle, Barney L.; Bielejec, Edward S.; Wampler, William R.

Abstract not provided.

Bielejec, Edward S.; King, Donald B.; Doyle, Barney L.; Serkland, Darwin K.; Fleming, Robert M.; Pacheco, Jose L.; Hughart, David R.; Marinella, Matthew J.; Carroll, Malcolm

Abstract not provided.

Pacheco, Jose L.; Hughart, David R.; Doyle, Barney L.; Bielejec, Edward S.; Marinella, Matthew J.

Abstract not provided.

Auden, Elizabeth C.; Doyle, Barney L.; Bielejec, Edward S.; Wampler, William R.

Abstract not provided.

Doyle, Barney L.; Buller, Daniel L.; Hattar, Khalid M.

Abstract not provided.

Doyle, Barney L.

Abstract not provided.

Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Doyle, Barney L.; Swanson, Scot E.; Van Deusen, Stuart B.

Abstract not provided.

Hattar, Khalid M.; Bufford, Daniel C.; Marshall, Michael T.; Doyle, Barney L.; Buller, Daniel L.

Abstract not provided.

Clark, Blythe C.; Dingreville, Remi P.; Boyce, Brad B.; Hattar, Khalid M.; Doyle, Barney L.

Abstract not provided.

Hattar, Khalid M.; Boyce, Brad B.; Doyle, Barney L.; Dingreville, Remi P.; Buchheit, Thomas E.

Abstract not provided.

JVST-A

Lohn, Andrew L.; Decker, Seth D.; Doyle, Barney L.; Mickel, Patrick R.; Marinella, Matthew J.

Abstract not provided.