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Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam

IEEE Transactions on Nuclear Science

Dodds, N.A.; Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Doyle, Barney L.; Trinczek, M.; Blackmore, E.W.; Rodbell, K.P.; Gordon, M.S.; Reed, R.A.; Pellish, J.A.; LaBel, K.A.; Marshall, P.W.; Swanson, Scot E.; Vizkelethy, Gyorgy V.; Van Deusen, Stuart B.; Sexton, Frederick W.; Martinez, Marino M.

The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. We show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.

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TYPE Journal Article YEAR 2014
ScopusOSTIDOI

Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors

IEEE Transactions on Nuclear Science

Hughart, David R.; Pacheco, Jose L.; Lohn, Andrew L.; Mickel, Patrick R.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Doyle, Barney L.; Wolfley, Steven L.; Dodd, Paul E.; Shaneyfelt, Marty R.; McLain, Michael L.; Marinella, Matthew J.

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.

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TYPE Presentation YEAR 2014
ScopusOSTI

Displacement damage caused by gamma-rays and neutrons on Au and Se

Doyle, Barney L.

This report documents theoretical calculations of displacement damage produced by gamma rays and neutrons on various materials. The average energy of the gamma rays was 1.24 MeV and 1.0 MeV for the neutrons. The fluence of the gamma rays was 1.2e14 γ/cm2 , for the neutrons it was 1.0e12 n/cm2. The initial materials of interest were Au and Se. The total doses of the gamma ray exposures were in the 100 kRad range for both elements. An equivalent electron fluence was approximated to be the same as the gamma ray fluence over one gamma ray attenuation length in both materials and at the same 1.24 MeV energy. The maximum recoil energy of the Au and Se for these electrons was calculated relativisticaly to be 29 and 72 eV respectively. The relativisitic McKinley and Feshbach theory for the atomic recoil cross sections produced by the electrons were in the 10s of mbarn range and an upper limit for the concentration of Frenkel pairs for the gamma ray exposures for both elements was in the ppb range. The Robinson Energy Partioning Theory for non-ionizing energy loss (NIEL) of ions in solids was used to calculate the concentration of Frenkel pairs produced by the 1 MeV neutrons, and this concentration was also in the ppb range for both Au and Se. Low damage levels like this can have effects on minority carrier recombination in semiconductors, but are not expected to have any effect on metals like Au, or metalloids such as Se.

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TYPE Other Report YEAR 2014
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Ion channeling revisited

Doyle, Barney L.; Corona, Aldo C.; Nguyen, Anh N.

A MS Excel program has been written that calculates accidental, or unintentional, ion channeling in cubic bcc, fcc and diamond lattice crystals or polycrystalline materials. This becomes an important issue when simulating the creation by energetic neutrons of point displacement damage and extended defects using beams of ions. All of the tables and graphs in the three Ion Beam Analysis Handbooks that previously had to be manually looked up and read from were programed into Excel in handy lookup tables, or parameterized, for the case of the graphs, using rather simple exponential functions with different powers of the argument. The program then offers an extremely convenient way to calculate axial and planar half-angles and minimum yield or dechanneling probabilities, effects on half-angles of amorphous overlayers, accidental channeling probabilities for randomly oriented crystals or crystallites, and finally a way to automatically generate stereographic projections of axial and planar channeling half-angles. The program can generate these projections and calculate these probabilities for axes and [hkl] planes up to (555).

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TYPE SAND Report YEAR 2014
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Theory of using magnetic deflections to combine charged particle beams

Doyle, Barney L.; Steckbeck, Mackenzie K.

Several radiation effects projects in the Ion Beam Lab (IBL) have recently required two disparate charged particle beams to simultaneously strike a single sample through a single port of the target chamber. Because these beams have vastly different mass–energy products (MEP), the low-MEP beam requires a large angle of deflection toward the sample by a bending electromagnet. A second electromagnet located further upstream provides a means to compensate for the small angle deflection experienced by the high-MEP beam during its path through the bending magnet. This paper derives the equations used to select the magnetic fields required by these two magnets to achieve uniting both beams at the target sample. A simple result was obtained when the separation of the two magnets was equivalent to the distance from the bending magnet to the sample, and the equation is given by: Bs= 1/2(rc/rs) Bc, where Bs and Bc are the magnetic fields in the steering and bending magnet and rc/rs is the ratio of the radii of the bending magnet to that of the steering magnet. This result is not dependent upon the parameters of the high MEP beam, i.e. energy, mass, charge state. Therefore, once the field of the bending magnet is set for the low-MEP beam, and the field in the steering magnet is set as indicted in the equation, the trajectory path of any high-MEP beam will be directed into the sample.

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TYPE SAND Report YEAR 2014
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Rutherford forward scattering and elastic recoil detection (RFSERD) as a method for characterizing ultra-thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Lohn, Andrew J.; Doyle, Barney L.; Stein, Gregory J.; Mickel, Patrick R.; Stevens, James E.; Marinella, Matthew J.

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. The technique is applied to tantalum oxide memristors but can be extended to a wide range of materials systems. © 2014 Published by Elsevier B.V.

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TYPE Journal Article YEAR 2014
ScopusOSTIDOI

Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

ECS Transactions

Yates, B.R.; Darby, B.L.; Petersen, D.H.; Hansen, O.; Lin, R.; Nielsen, P.F.; Doyle, Barney L.; Kontos, A.; Jones, K.S.

The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.

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TYPE Conference YEAR 2013
ScopusOSTI

Ion beam characterization of advanced luminescent materials for application in radiation effects microscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Branson, J.V.; Hattar, K.; Rossi, P.; Vizkelethy, G.; Powell, Cody J.; Hernandez-Sanchez, Bernadette A.; Doyle, Barney L.

The ion photon emission microscope (IPEM) is a technique developed at Sandia National Laboratories (SNL) to study radiation effects in integrated circuits with high energy, heavy ions, such as those produced by the 88" cyclotron at Lawrence Berkeley National Laboratory (LBNL). In this method, an ion-luminescent film is used to produce photons from the point of ion impact. The photons emitted due to an ion impact are imaged on a position-sensitive detector to determine the location of a single event effect (SEE). Due to stringent resolution, intensity, wavelength, decay time, and radiation tolerance demands, an engineered material with very specific properties is required to act as the luminescent film. The requirements for this material are extensive. It must produce a high enough induced luminescent intensity so at least one photon is detected per ion hit. The emission wavelength must match the sensitivity of the detector used, and the luminescent decay time must be short enough to limit accidental coincidences. In addition, the material must be easy to handle and its luminescent properties must be tolerant to radiation damage. Materials studied for this application include plastic scintillators, GaN and GaN/InGaN quantum well structures, and lanthanide-activated ceramic phosphors. Results from characterization studies on these materials will be presented; including photoluminescence, cathodoluminescence, ion beam induced luminescence, luminescent decay times, and radiation damage. Results indicate that the ceramic phosphors are currently proving to be the ideal material for IPEM investigations.

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TYPE Conference YEAR 2011
ScopusOSTI

Fast neutron environments

Hattar, Khalid M.; Puskar, J.D.; Doyle, Barney L.; Boyce, Brad B.; Buchheit, Thomas E.; Foiles, Stephen M.; Lu, Ping L.; Clark, Blythe C.; Kotula, Paul G.; Goods, Steven H.

The goal of this LDRD project is to develop a rapid first-order experimental procedure for the testing of advanced cladding materials that may be considered for generation IV nuclear reactors. In order to investigate this, a technique was developed to expose the coupons of potential materials to high displacement damage at elevated temperatures to simulate the neutron environment expected in Generation IV reactors. This was completed through a high temperature high-energy heavy-ion implantation. The mechanical properties of the ion irradiated region were tested by either micropillar compression or nanoindentation to determine the local properties, as a function of the implantation dose and exposure temperature. In order to directly compare the microstructural evolution and property degradation from the accelerated testing and classical neutron testing, 316L, 409, and 420 stainless steels were tested. In addition, two sets of diffusion couples from 316L and HT9 stainless steels with various refractory metals. This study has shown that if the ion irradiation size scale is taken into consideration when developing and analyzing the mechanical property data, significant insight into the structural properties of the potential cladding materials can be gained in about a week.

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TYPE SAND Report YEAR 2011
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Results 51–100 of 176
Results 51–100 of 176