Publications

Results 51–100 of 126
Skip to search filters

The Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of Physical Chemistry C

Coltrin, Michael E.; Subramania, Ganapathi S.; Tsao, Jeffrey Y.; Wang, George T.; Wierer, Jonathan W.; Wright, Jeremy B.; Armstrong, Andrew A.; Brener, Igal B.; Chow, Weng W.; Crawford, Mary H.; Fischer, Arthur J.; Koleske, Daniel K.; Martin, James E.; Rohwer, Lauren E.

Abstract not provided.

More Details
TYPE Journal Article YEAR 2014
OSTIDOI

Gallium nitride based logpile photonic crystals for visible lighting

Proceedings of SPIE - The International Society for Optical Engineering

Subramania, G.; Li, Q.; Lee, Y.J.; Figiel, J.J.; Sanchez, Carlos A.; Wang, George T.; Fischer, Arthur J.; Biswas, R.

Photonic crystals (PC) can fundamentally alter the emission behavior of light sources by suitably modifying the electromagnetic environment around them. Strong modulation of the photonic density of states especially by full threedimensional (3D) bandgap PCs, enables one to completely suppress emission in undesired wavelengths and directions while enhancing desired emission. This property of 3DPC to control spontaneous emission, opens up new regimes of light-matter interaction in particular, energy efficient and high brightness visible lighting. Therefore a 3DPC composed entirely of gallinum nitride (GaN), a key material used in visible light emitting diodes can dramatically impact solid state lighting. The following work demonstrates an all GaN logpile 3DPC with bandgap in the visible fabricated by a template directed epitaxial growth. © 2012 SPIE.

More Details
TYPE Conference YEAR 2012
ScopusOSTI

Final LDRD report : enhanced spontaneous emission rate in visible III-nitride LEDs using 3D photonic crystal cavities

Fischer, Arthur J.; Subramania, Ganapathi S.; Lee, Yun-Ju L.; Koleske, Daniel K.; Li, Qiming L.; Wang, George T.; Luk, Ting S.; Fullmer, Kristine W.

The fundamental spontaneous emission rate for a photon source can be modified by placing the emitter inside a periodic dielectric structure allowing the emission to be dramatically enhanced or suppressed depending on the intended application. We have investigated the relatively unexplored realm of interaction between semiconductor emitters and three dimensional photonic crystals in the visible spectrum. Although this interaction has been investigated at longer wavelengths, very little work has been done in the visible spectrum. During the course of this LDRD, we have fabricated TiO{sub 2} logpile photonic crystal structures with the shortest wavelength band gap ever demonstrated. A variety of different emitters with emission between 365 nm and 700 nm were incorporated into photonic crystal structures. Time-integrated and time-resolved photoluminescence measurements were performed to measure changes to the spontaneous emission rate. Both enhanced and suppressed emission were demonstrated and attributed to changes to the photonic density of states.

More Details
TYPE SAND Report YEAR 2009
OSTIDOI

Nanoengineering for solid-state lighting

Crawford, Mary H.; Fischer, Arthur J.; Koleske, Daniel K.; Missert, Nancy A.

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

More Details
TYPE SAND Report YEAR 2009
OSTIDOI

Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1

Creighton, J.R.; Koleske, Daniel K.; Russell, Michael J.; Fischer, Arthur J.

This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and extends our previous research (funded by DOE) that developed emissivity correcting pyrometers (ECP) based on the high-temperature GaN opacity near 400 nm (the ultraviolet-violet range, or UVV), and the sapphire opacity in the mid-IR (MIR) near 7.5 microns.

More Details
TYPE SAND Report YEAR 2006
OSTIDOI
Results 51–100 of 126
Results 51–100 of 126