MBE and Material Characteristics of T2SL
Abstract not provided.
Publications
Building a photonic streak camera
Abstract not provided.
Cost Analysis of Flat-Plate Concentrators Employing Microscale Photovoltaic Cells for High Energy Per Unit Area Applications
Abstract not provided.
Votlage matching and optimal cell compositions for microsystems enabled photovoltaic modules
IEEE Journal of Photovotaics
Abstract not provided.
Flat plate concentrators with large acceptance angle enabled by micro cells and mini lenses: performance evaluation
Abstract not provided.
OMVPE Regrowth and Transverse QW Functionality for Photonic Integrated Circuits
Abstract not provided.
Enhanced efficiency for voltage matched stacked multi-junction cells :
Abstract not provided.
Cost Analysis for Flat-Plate Concentrators Employing Microscale Photovoltaic Cells
Abstract not provided.
Cost Analysis for Flat-Plate Concentrators Employing Microscale Photovoltaic Cells
Abstract not provided.
Enhanced efficiency for voltage matched stacked multijunction cells: optimization with yarly temperature and spectra variations
Abstract not provided.
Advanced compound semiconductor and silicon fabrication techniques for next-generation solar power systems
ECS Transactions
Microsystem technologies have the potential to significantly improve the performance, reduce the cost, and extend the capabilities of solar power systems. These benefits are possible due to a number of significant beneficial scaling effects within solar cells, modules, and systems that are manifested as the size of solar cells decrease to the sub-millimeter range. To exploit these benefits, we are using advanced fabrication techniques to create solar cells from a variety of compound semiconductors and silicon that have lateral dimensions of 250 - 1000 μm and are 1 - 20 μm thick. These fabrication techniques come out of relatively mature microsystem technologies such as integrated circuits (IC) and microelectromechanical systems (MEMS) which provide added supply chain and scale-up benefits compared to even incumbent PV technologies. © The Electrochemical Society.
Voltage matching considerations for stacked multijunction cells and modules
Abstract not provided.
Cost Analysis for Flat-Plate Concentrators Employing Microscale Photovoltaic Cells
Abstract not provided.
Wide dynamic range of ring resonator channel-dropping filters with integrated SOAs
Optics InfoBase Conference Papers
We present the first complete simulation of the dynamic range and noise of InGaAsP multi-ring channel-drop filters with internal SOAs. The results show gain saturation, and spontaneous emission noise limit the dynamic range. © 2010 Optical Society of America.
Wide dynamic range of ring resonator channel-dropping filters with integrated SOAs
2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2011
We present the first complete simulation of the dynamic range and noise of InGaAsP multi-ring channel-drop filters with internal SOAs. The results show gain saturation, and spontaneous emission noise limit the dynamic range. © 2011 Optical Society of America.
Optical logic gates using interconnected photodiodes and electro-absorption modulators
Optics InfoBase Conference Papers
We demonstrate an optical gate architecture with optical isolation between input and output using interconnected PD-EAMs to perform AND and NOT functions. Waveforms for 10 Gbps AND and 40 Gbps NOT gates are shown. © 2010 Optical Society of America.
Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs
Abstract not provided.
Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers
IEEE Journal of Quantum Electronics
Abstract not provided.
Optical Logic Gates Using Interconnected Photodiodes and Electro-Absorption Modulators
Abstract not provided.
Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs
We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.
Results 51–70 of 70