Publications

Abstract not provided.

We report on the development of a frequency domain method of analysis in the Panzer foundation of Charon. We first present a harmonic balance approach for calculating the frequency-domain re- sponse (in its weak form) of a non-linear system of partial differential equations (PDEs). Our approach is anemable to adaptation of Charon's transient PDE models for frequency domain analysis. We make an observation that allows us to analyze either small-signal or large-signal responses with minimal specialization of the algorithm. We conclude by confirming our small- and large-signal analyses of a transient, linear Helmholtz equation by comparing its analytic solution to our results. We include figures from a sequence of non-linear perturbations of this system, showcasing the fact that, when the non-linearities are insignificant, the small- and large-signal analyses obtain similar solutions. On the other hand, we depict the inadequacy of a small-signal analysis to accurately capture the response in the presence of a large non-linearity, and underscore the requirement to employ a large-signal analysis for modelling highly non-linear systems.

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.

We present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. The results compare favorably with experimental observation.

Abstract not provided.