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Galvanostatic plating with a single additive electrolyte for bottom-up filling of copper in mesoscale TSVs

Journal of the Electrochemical Society

Menk, L.A.; Baca, Ehren B.; Blain, Matthew G.; McClain, Jaime L.; Dominguez, Jason J.; Smith, A.; Hollowell, Andrew E.

A methanesulfonic acid (MSA) electrolyte with a single suppressor additive was used for potentiostatic bottom-up filling of copper in mesoscale through silicon vias (TSVs). Conversly, galvanostatic deposition is desirable for production level full wafer plating tools as they are typically not equipped with reference electrodes which are required for potentiostatic plating. Potentiostatic deposition was used to determine the over-potential required for bottom-up TSV filling and the resultant current was measured to establish a range of current densities to investigate for galvanostatic deposition. Galvanostatic plating conditions were then optimized to achieve void-free bottom-up filling in mesoscale TSVs for a range of sample sizes.

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TYPE Journal Article YEAR 2019
ScopusOSTIDOI

Bottom-up copper filling of millimeter size through silicon vias

Journal of the Electrochemical Society

Josell, D.; Menk, L.A.; Hollowell, Andrew E.; Blain, M.; Moffat, T.P.

This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a poloxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the free-surface due to coupling with electrolyte non-uniform hydrodynamics. The reentrant notches at the bottom of the TSVs caused by intentional over-etching during fabrication negatively impact the filling results. In contrast, deposition from low chloride electrolytes (i.e., 80 μmol/L) proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be systematically advanced thereby giving rise to void-free filling of the TSV.

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TYPE Journal Article YEAR 2019
ScopusOSTIDOI

Frequency Noise of Silicon Nitride Optomechanical Oscillators with Integrated Waveguides

Grine, Alejandro J.; Grine, Alejandro J.; Serkland, Darwin K.; Serkland, Darwin K.; Wood, Michael G.; Wood, Michael G.; Soudachanh, Amy L.; Soudachanh, Amy L.; Hollowell, Andrew E.; Hollowell, Andrew E.; Koch, Lawrence K.; Koch, Lawrence K.; Hains, Christopher H.; Hains, Christopher H.; Siddiqui, Aleem M.; Siddiqui, Aleem M.; Eichenfield, Matthew S.; Eichenfield, Matthew S.; Dagel, Daryl D.; Dagel, Daryl D.; Grossetete, Grant G.; Grossetete, Grant G.; Matins, Benjamin M.; Matins, Benjamin M.

Abstract not provided.

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TYPE Conference Poster YEAR 2018
OSTIDOI
Results 26–50 of 91
Results 26–50 of 91