Publications

Results 26–46 of 46
Skip to search filters

Development of High-Voltage Vertical GaN PN Diodes (invited)

Kaplar, Robert K.; Allerman, A.A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke Y.; Binder, Andrew B.; Dickerson, Jeramy R.; Pickrell, Gregory P.; Anderson, T.J.; Gallagher, J.C.; Jacobs, A.G.; Koehler, A.D.; Tadjer, M.J.; Hobart, K.D.; Ebrish, M.E.; Porter, M.A.; Martinez, R.M.; Zeng, K.Z.; Ji, D.J.; Chowdhury, S.C.; Aktas, O.A.; Cooper, J.A.

Abstract not provided.

More Details
TYPE Conference Poster YEAR 2020
OSTI

Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes

4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Dickerson, Jeramy R.; Binder, Andrew B.; Pickrell, Gregory P.; Gunning, Brendan P.; Kaplar, Robert K.

Proper edge termination is required to reach large blocking voltages in vertical power devices. Limitations in selective area p-type doping in GaN restrict the types of structures that can be used for this purpose. A junction termination extension (JTE) can be employed to reduce field crowding at the junction periphery where the charge in the JTE is designed to sink the critical electric field lines at breakdown. One practical way to fabricate this structure in GaN is by a step-etched single-zone or multi-zone JTE where the etch depths and doping levels are used to control the charge in the JTE. The multi-zone JTE is beneficial for increasing the process window and allowing for more variability in parameter changes while still maintaining a designed percentage of the ideal breakdown voltage. Impact ionization parameters reported in literature for GaN are compared in a simulation study to ascertain the dependence on breakdown performance. Two 3-zone JTE designs utilizing different impact ionization coefficients are compared. Simulations confirm that the choice of impact ionization parameters affects both the predicted breakdown of the device as well as the fabrication process variation tolerance for a multi-zone JTE. Regardless of the impact ionization coefficients utilized, a step-etched JTE has the potential to provide an efficient, controllable edge termination design.

More Details
TYPE Conference Poster YEAR 2020
ScopusOSTIDOI

Bevel edge termination for vertical GaN power diodes

2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019

Binder, Andrew B.; Dickerson, Jeramy R.; Crawford, Mary H.; Pickrell, Gregory P.; Allerman, A.A.; Sharps, Paul; Kaplar, Robert K.

Edge termination for vertical power devices presents a significant challenge, as improper termination can result in devices with a breakdown voltage significantly less than the ideal infinite-planar case. Edge termination for vertical GaN devices is particularly challenging due to limitations in ion implantation for GaN, and as such this work investigates a bevel edge termination technique that does not require implantation and has proven to be effective for Si and SiC power devices. However, due to key differences between GaN versus Si and SiC p-n junctions (specifically, a grown versus an implanted junction), this technology needs to be reevaluated for GaN. Simulation results suggest that by leveraging the effective bevel angle relationship, a 10-15° physical bevel angle can yield devices with 85-90% of the ideal breakdown voltage. Results are presented for a negative bevel edge termination on an ideally 2 kV vertical GaN p-n diode.

More Details
TYPE Conference Poster YEAR 2019
ScopusOSTIDOI
Results 26–46 of 46
Results 26–46 of 46