Publications

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Compression creep tests were performed on the ternary 91.84Sn-3.33Ag-4.83Bi (wt.%, abbreviated Sn-Ag-Bi) Pb-free alloy. The test temperatures were: -25 °C, 25 °C, 75 °C, 125 °C, and 160 °C (± 0.5 °C). Four loads were used at the two lowest temperatures and five at the higher temperatures. The specimens were tested in the as-fabricated condition or after having been subjected to one of two air aging conditions: 24 hours at either 125 °C or 150 °C. The strain-time curves exhibited frequent occurrences of negative creep and small-scale fluctuations, particularly at the slower strain rates, that were indicative of dynamic recrystallization (DRX) activity. The source of tertiary creep behavior at faster strain rates was likely to also be DRX rather than a damage accumulation mechanism. Overall, the strain-time curves did not display a consistent trend that could be directly attributed to the aging condition. The sinh law equation satisfactorily represented the minimum strain rate as a function of stress and temperature so as to investigate the deformation rate kinetics: dε/dtmin = Asinhn (ασ) exp (-ΔH/RT). The values of α, n, and ΔH were in the following ranges (±95% confidence interval): α, 0.010-0.015 (±0.005 1/MPa); n, 2.2-3.1 (±0.5); and ΔH, 54-66 (±8 kJ/mol). The rate kinetics analysis indicated that short-circuit diffusion was a contributing mechanism to dislocation motion during creep. The rate kinetics analysis also determined that a minimum creep rate trend could not be developed between the as-fabricated versus aged conditions. This study showed that the elevated temperature aging treatments introduced multiple changes to the Sn-Ag-Bi microstructure that did not result in a simple loss ("softening") of its mechanical strength. © 2012 by Sandia Corporation.

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The development of Pb-free solutions for the highreliability electronics community necessitates the consideration of hybrid microcircuit (HMC) products. This study used a test vehicle that included both plastic and ceramic packages as well as leaded and area-array solder joints on an alumina substrate. The conductor was a Ag-Pd thick film layer. The shear strength was measured for interconnections made with 63Sn-37Pb (wt.%, abbreviated Sn-Pb) and 95.5Sn-3.0Ag-0.5Cu (Sn-Ag-Cu) solders as a function of isothermal aging, thermal cycling, and thermal shock environments. The area-array packages indicated that solder joint fatigue was not altered significantly in a forward compatibility situation (i.e., Sn-Pb balls and a Sn-Ag-Cu assembly process). Local CTE mismatch fatigue strains are important for solder joints connecting ceramic area array packages to ceramic substrates. The gull-wing lead, SOT plastic package solder joints assembled with the Sn-Ag-Cu solder exhibit a greater strength loss under temperature cycling than did the corresponding Sn-Pb interconnections. Thermal shock is more detrimental to Sn-Pb HMC solder joints than are the equivalent number of thermal cycles. Copyright 2012 ASM International® All rights reserved.

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Thick film conductors provide the circuitry for hybrid microcircuit (HMC) assemblies. The integrity of solder joints made to those conductors is a function of the solid-state interface reactions that occur under long-term service environments. A study was performed, which examined the mechanical strength of 63Sn-37Pb (wt.%, Sn-Pb) solder joints made to the thick film conductor, 76Au-21Pt-3Pd (Au-Pt-Pd), on 96% Al2O3 substrates. The Au-Pt-Pd layer was 18±3 μm thick. Isothermal aging accelerated the solder/thick film interface reaction, which resulted in the growth of an intermetallic compound (IMC) layer and consumption of the thick film layer. The aging temperatures were 70°C, 100°C, and 135°C. The aging times were 5-5000 hours. The sheppard's hook pull test was used to assess the strength of the Sn-Pb solder joints at two displacement rates: 10 mm/min and 100 mm/min. A measurable loss of joint strength was observed after aging, which did not generate a great deal of IMC layer growth. The aging effects occurred at the thick film/Al2O3 interface as concluded by other authors. However, the present investigation showed those strength losses to be reversible after more extended aging times at elevated temperature. The strength and failure modes were sensitive to displacement rate when IMC layer development was minimal. Extensive growth of the IMC layer was accompanied by the formation of a Pb-rich layer ahead of it, which was responsible for a gradual decrease in the pull strength. In this case, pull strength and failure mode were less sensitive to displacement rate. The solder joints maintained a nominal level of pull strength, even after nearly all of the thick film conductor had been consumed by IMC layer formation. Copyright © 2010 MS&T'10®.