Ultraviolet Semiconductor Materials for Next-Generation Water Security (invited)
Abstract not provided.
Publications
Using DFT results to understand the evolution of defect state populations in ion-damaged HBT's
Abstract not provided.
DFT calculations pursuant to modeling atomic displacement damage in devices
Abstract not provided.
An efficient procedure for the development of optimized Projector Augmented Wave basis functions
Physical Review B
Abstract not provided.
Density-Functional Theory Calculations for Charged Defects in Semiconductors
Abstract not provided.
Implementation of the Optimized Effective Potential (OEP) and Exact Exchange (EXX) in Socorro
Abstract not provided.
Density-functional-theory results for Ga and As vacancies in GaAs obtained using the Socorro code
The Socorro code has been used to obtain density-functional theory results for the Ga vacancy (V{sub Ga}) and the As vacancy (V{sub As}) in GaAs. Calculations were performed in a nominal 216-atom simulation cell using the local-density approximation for exchange and correlation. The results from these calculations include: (1) the charge states, the atomic configurations of stable and metastable states, (2) energy levels in the gap, and (3) activation energies for migration. Seven charge states were found for the Ga vacancy (-3, -2, -1, 0, +1, +2, +3). The stable structures of the -3, -2, -1, and 0 charge states consist of an empty Ga site with four As neighbors displaying T{sub d} symmetry. The stable structures of the +1, +2, and +3 charge states consist of an As antisite next to an As vacancy; AsGa-V{sub As}. Five charge states were found for the As vacancy (-3, -2, -1, 0, +1). The stable structures of the -1, 0, and +1 charge states consist of an empty As site with four Ga neighbors displaying C{sub 2v} symmetry. The stable structures of the -3 and -2 charge states consist of a Ga antisite next to a Ga vacancy; Ga{sub As}-V{sub Ga}. The energy levels of V{sub Ga} lie below mid-gap while the energy levels of As{sub Ga}-V{sub As} lie above and below mid-gap. All but one of the V{sub As} energy levels lie above mid-gap while the As{sub Ga}-V{sub As} energy level lies below mid-gap. The migration activation energies of the defect states were all found to be larger than 1.35 eV.
The Socorro density-functional-theory code
Abstract not provided.
Interaction of the N vacancy with H and Mg acceptors in p-type GaN
Results from recent experimental studies suggest that the N vacancy (V{sub N}) may compensate Mg acceptors in GaN in addition to the compensation arising from H introduced during growth. To investigate this possibility further, density-functional-theory calculations were performed to determine the interactions of V{sub N} with H, Mg, and the MgH center in GaN, and modeling was performed to determine the state populations at elevated temperatures. The results indicate that V{sub N}H and MgV{sub N}H complexes with H inside the vacancy are highly stable in p-type GaN and act to compensate or passivate Mg acceptors. Furthermore, barriers for formation of these complexes were investigated and the results indicate that they can readily form at temperatures > 400 C, which is well below temperatures typically used for GaN growth. Overall, the results indicate that the V{sub N} compensation behavior suggested by experiments arises not from isolated V{sub N}, but rather from V{sub N}H and MgV{sub N}H complexes with H located inside the vacancy.
Density-functional-theory studies of vacancy defects in silicon using the Socorro code
Abstract not provided.
The Socorro density-functional-theory code
Abstract not provided.
Erratum: formation energies, binding energies, structure, and electronic transitions of Si di-vacancies by density functional calculations [Phys. Rev. B 74, 205208 (2006)]
Proposed for publication in Physical Review B.
Abstract not provided.
Beyond the local density approximation : improving density functional theory for high energy density physics applications
A finite temperature version of 'exact-exchange' density functional theory (EXX) has been implemented in Sandia's Socorro code. The method uses the optimized effective potential (OEP) formalism and an efficient gradient-based iterative minimization of the energy. The derivation of the gradient is based on the density matrix, simplifying the extension to finite temperatures. A stand-alone all-electron exact-exchange capability has been developed for testing exact exchange and compatible correlation functionals on small systems. Calculations of eigenvalues for the helium atom, beryllium atom, and the hydrogen molecule are reported, showing excellent agreement with highly converged quantumMonte Carlo calculations. Several approaches to the generation of pseudopotentials for use in EXX calculations have been examined and are discussed. The difficult problem of finding a correlation functional compatible with EXX has been studied and some initial findings are reported.
Density functional theory investigation of N interstitial migration in GaN
Abstract not provided.
Iterative optimized effective potential and exact exchange calculations at finite temperature
We report the implementation of an iterative scheme for calculating the Optimized Effective Potential (OEP). Given an energy functional that depends explicitly on the Kohn-Sham wave functions, and therefore, implicitly on the local effective potential appearing in the Kohn-Sham equations, a gradient-based minimization is used to find the potential that minimizes the energy. Previous work has shown how to find the gradient of such an energy with respect to the effective potential in the zero-temperature limit. We discuss a density-matrix-based derivation of the gradient that generalizes the previous results to the finite temperature regime, and we describe important optimizations used in our implementation. We have applied our OEP approach to the Hartree-Fock energy expression to perform Exact Exchange (EXX) calculations. We report our EXX results for common semiconductors and ordered phases of hydrogen at zero and finite electronic temperatures. We also discuss issues involved in the implementation of forces within the OEP/EXX approach.
Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.
H enhancement of N vacancy migration in GaN
Applied Physics Letters
We have used density functional theory to investigate diffusion of VN+ in the presence of H+. Optimal migration pathways were determined using the climbing image nudged elastic band and directed dimer methods. Our calculations indicate that the rate-limiting barrier for VN+ migration will be reduced by 0.58 eV by interplay with H+, which will enhance migration by more than an order of magnitude at typical GaN growth temperatures. © 2005 American Institute of Physics.
Formation of VnH and MgVnH in p-type GaN(Mg,H)
Abstract not provided.
Substitutional and interstitial oxygen in wurtzite GaN
Proposed for publication in the Journal of Applied Physics.
Abstract not provided.
Final report on grand challenge LDRD project : a revolution in lighting : building the science and technology base for ultra-efficient solid-state lighting
This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.
Configurations, energies, and thermodynamics of the neutral MgH complex in GaN
Journal of Applied Physics
A study was performed on the atomic configurations corresponding to local-energy minima for the neutral MgH complex in wurtzite GaN. The density-functional theory and the generalized-gradient approximation for exchange and correlation were used for the identification. The results showed that the dominant configuration consisted of H at an antibonding site of a N neighbor of the substitutional Mg, and the Mg-N and N-H bonds were nearly aligned.
Hydrogen configurations, formation energies, and migration barriers in GaN
Proposed for publication in Journal of Applied Physics.
Abstract not provided.
Mechanisms of Atmospheric Copper Sulfidation and Evaluation of Parallel Experimentation Techniques
A physics-based understanding of material aging mechanisms helps to increase reliability when predicting the lifetime of mechanical and electrical components. This report examines in detail the mechanisms of atmospheric copper sulfidation and evaluates new methods of parallel experimentation for high-throughput corrosion analysis. Often our knowledge of aging mechanisms is limited because coupled chemical reactions and physical processes are involved that depend on complex interactions with the environment and component functionality. Atmospheric corrosion is one of the most complex aging phenomena and it has profound consequences for the nation's economy and safety. Therefore, copper sulfidation was used as a test-case to examine the utility of parallel experimentation. Through the use of parallel and conventional experimentation, we measured: (1) the sulfidation rate as a function of humidity, light, temperature and O{sub 2} concentration; (2) the primary moving species in solid state transport; (3) the diffusivity of Cu vacancies through Cu{sub 2}S; (4) the sulfidation activation energies as a function of relative humidity (RH); (5) the sulfidation induction times at low humidities; and (6) the effect of light on the sulfidation rate. Also, the importance of various sulfidation mechanisms was determined as a function of RH and sulfide thickness. Different models for sulfidation-reactor geometries and the sulfidation reaction process are presented.
High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications
Abstract not provided.
Determination of solid-state sulfidation mechanisms in ion-implanted copper
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Ion-beam irradiation and ion implantation were used to evaluate the influence of point defects and alloying elements on the sulfidation rate of copper films in atmospheric environments containing H2S. Low-energy ions from an oxygen plasma were used to grow thin metal oxide passivation layers on Cu films that were subsequently irradiated and exposed to sulfidizing environments (50-600 ppb H2S in air with 0.5-85% relative humidity). The type of oxide proved to be important in that a CuO layer essentially prevented sulfidation whereas a Cu2O layer permitted sulfidation. For the native copper oxide (Cu2O), density-functional theory modeling of Cu divacancy binding energies suggested that alloying with In or Al would cause vacancy trapping and possibly slow the rate of sulfidation. This finding was then experimentally verified for an In-implanted Cu film. A series of marker experiments using unalloyed Cu showed that sulfidation proceeds by solid-state transport of Cu from the substrate through the Cu2S product layer. © 2001 Elsevier Science B.V.
Results 26–50 of 54