Publications

He, Yuping H.; He, Yuping H.; Spataru, Dan C.; Leonard, Francois L.; Jones, Reese E.; Foster, Michael E.; Allendorf, Mark D.; Talin, A.A.

Abstract not provided.

Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Leonard, Francois L.; Agarwal, Sapan A.; Plimpton, Steven J.; Jacobs-Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew J.; Talin, A.A.

Abstract not provided.

Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A.A.; Rost, C.M.R.; Maria, J.P.M.; Gaskins, J.T.G.; Hopkins, P.E.H.; Allerman, A.A.

Abstract not provided.

Nature Materials

Van De Burgt, Yoeri; Lubberman, Ewout; Fuller, Elliot J.; Keene, Scott T.; Faria, Grégorio C.; Agarwal, Sapan A.; Marinella, Matthew J.; Talin, A.A.; Salleo, Alberto

The brain is capable of massively parallel information processing while consuming only ~1-100 fJ per synaptic event1,2. Inspired by the efficiency of the brain, CMOS-based neural architectures3 and memristors4,5 are being developed for pattern recognition and machine learning. However, the volatility, design complexity and high supply voltages for CMOS architectures, and the stochastic and energy-costly switching of memristors complicate the path to achieve the interconnectivity, information density, and energy efficiency of the brain using either approach. Here we describe an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors. ENODeswitches at lowvoltage and energy (<10 pJ for 103 μm2 devices), displays >500 distinct, non-volatile conductance states within a~1V range, and achieves high classification accuracy when implemented in neural network simulations. Plastic ENODes are also fabricated on flexible substrates enabling the integration of neuromorphic functionality in stretchable electronic systems6,7. Mechanical flexibility makes ENODes compatible with three-dimensional architectures, opening a path towards extreme interconnectivity comparable to the human brain.

Journal of Power Sources

Jung, Hyun; Gerasopoulos, Konstantinos; Talin, A.A.; Ghodssi, Reza

The insertion/extraction of lithium into/from various host materials is the basic process by which lithium-ion batteries reversible store charge. This process is generally accompanied by strain in the host material, inducing stress which can lead to capacity loss. Therefore, understanding of both the structural changes and the associated stress – investigated almost exclusively separate to date – is a critical factor for developing high-performance batteries. Here, we report an in situ method, which utilizes Raman spectroscopy in parallel with optical interferometry to study effects of varying charging rates (C-rates) on the structure and stress in a V2O5 thin film cathode. Abrupt stress changes at specific crystal phase transitions in the Li[sbnd]V[sbnd]O system are observed and the magnitude of the stress changes with the amount of lithium inserted into the electrode are correlated. A linear increase in the stress as a function of x in LixV2O5 is observed, indicating that C-rate does not directly contribute to larger intercalation stress. However, a more rapid increase in disorder within the LixV2O5 layers is correlated with higher C-rate. Ultimately, these experiments demonstrate how the simultaneous stress/Raman in situ approach can be utilized as a characterization platform for investigating various critical factors affecting lithium-ion battery performance.

Advanced Materials

Fuller, Elliot J.; Gabaly, Farid E.; Léonard, François; Agarwal, Sapan; Plimpton, Steven J.; Jacobs-Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew J.; Talin, A.A.

Abstract not provided.

Marinella, Matthew J.; Marinella, Matthew J.; Jacobs-Gedrim, Robin B.; Agarwal, Sapan A.; Bondi, Robert J.; Fuller, Elliot J.; Kotula, Paul G.; Goeke, Ronald S.; Talin, A.A.; James, Conrad D.

Abstract not provided.

Talin, A.A.; Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Stavila, Vitalie S.; Ware, Nicholas W.; Udovic, Terry U.; Tang, W.S.

Abstract not provided.

ACS Applied Materials and Interfaces

Talin, A.A.; Ruzmetov, Dmitry; Kolmakov, Andrei; McKelvey, Kim; Ware, Nicholas; El Gabaly Marquez, Farid E.; Dunn, Bruce; White, Henry S.

Demonstration of three-dimensional all-solid-state Li-ion batteries (3D SSLIBs) has been a long-standing goal for numerous researchers in the battery community interested in developing high power and high areal energy density storage solutions for a variety of applications. Ideally, the 3D geometry maximizes the volume of active material per unit area, while keeping its thickness small to allow for fast Li diffusion. In this paper, we describe experimental testing and simulation of 3D SSLIBs fabricated using materials and thin-film deposition methods compatible with semiconductor device processing. These 3D SSLIBs consist of Si microcolumns onto which the battery layers are sequentially deposited using physical vapor deposition. The power performance of the 3D SSLIBs lags significantly behind that of similarly prepared planar SSLIBs. Analysis of the experimental results using finite element modeling indicates that the origin of the poor power performance is the structural inhomogeneity of the 3D SSLIB, coupled with low electrolyte ionic conductivity and diffusion rate in the cathode, which lead to highly nonuniform internal current density distribution and poor cathode utilization.

Michael, Joseph R.; Celio, Kimberlee C.; Talin, A.A.; Chandler, D.W.

Modern semiconductor devices rely on the transport of minority charge carriers. Direct examination of minority carrier lifetimes in real devices with nanometer-scale features requires a measurement method with simultaneously high spatial and temporal resolutions. Achieving nanometer spatial resolutions at sub-nanosecond temporal resolution is possible with pump-probe methods that utilize electrons as probes. Recently, a stroboscopic scanning electron microscope was developed at Caltech, and used to study carrier transport across a Si p-n junction [ 1 , 2 , 3 ] . In this report, we detail our development of a prototype scanning ultrafast electron microscope system at Sandia National Laboratories based on the original Caltech design. This effort represents Sandia's first exploration into ultrafast electron microscopy.

MRS Bulletin

Talin, A.A.; Jones, Reese E.; Hopkins, Patrick E.

Motivated by low cost, low toxicity, mechanical flexibility, and conformability over complex shapes, organic semiconductors are currently being actively investigated as thermoelectric (TE) materials to replace the costly, brittle, and non-eco-friendly inorganic TEs for near-ambient-temperature applications. Metal-organic frameworks (MOFs) share many of the attractive features of organic polymers, including solution processability and low thermal conductivity. A potential advantage of MOFs and MOFs with guest molecules (Guest@MOFs) is their synthetic and structural versatility, which allows both the electronic and geometric structure to be tuned through the choice of metal, ligand, and guest molecules. This could solve the long-standing challenge of finding stable, high-TE-performance n-type organic semiconductors, as well as promote high charge mobility via the long-range crystalline order inherent in these materials. In this article, we review recent advances in the synthesis of MOF and Guest@MOF TEs and discuss how the Seebeck coefficient, electrical conductivity, and thermal conductivity could be tuned to further optimize TE performance.

Kaplar, Robert K.; Allerman, A.A.; Armstrong, Andrew A.; Crawford, Mary H.; Dickerson, Jeramy R.; Fischer, Arthur J.; Leonard, Francois L.; Talin, A.A.; King, Michael P.; Baca, A.G.; Douglas, Erica A.

Abstract not provided.

Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Leonard, Francois L.; Talin, A.A.

Abstract not provided.

Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Leonard, Francois L.; Talin, A.A.

Abstract not provided.

Kaplar, Robert K.; Allerman, A.A.; Armstrong, Andrew A.; Crawford, Mary H.; Dickerson, Jeramy R.; Fischer, Arthur J.; Leonard, Francois L.; Talin, A.A.; King, Michael P.; Baca, A.G.; Douglas, Erica A.

Abstract not provided.

James, Conrad D.; Severa, William M.; Draelos, Timothy J.; Aimone, James B.; Vineyard, Craig M.; Agarwal, Sapan A.; Hsia, Alexander W.; Hughart, David R.; Finnegan, Patrick S.; Jacobs-Gedrim, Robin B.; Fuller, Elliot J.; Talin, A.A.; Marinella, Matthew J.; Schiek, Richard S.; Plimpton, Steven J.

Abstract not provided.

Schneider, Christian S.; Ullman, Andrew M.; Sugar, Joshua D.; Vitale, Suzy V.; Stavila, Vitalie S.; Talin, A.A.; Leonard, Francois L.; Fischer, Roland A.; Allendorf, Mark D.

Abstract not provided.

Celio, Kimberlee C.; Armstrong, Andrew A.; Allerman, A.A.; Leonard, Francois L.; Talin, A.A.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Talin, A.A.; McCormick, Frederick B.; Plimpton, Steven J.; El Gabaly Marquez, Farid E.; Fuller, Elliot J.; Jacobs-Gedrim, Robin B.; Hughart, David R.; Goeke, Ronald S.; Hsia, Alexander W.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Plimpton, Steven J.; Talin, A.A.; El Gabaly Marquez, Farid E.; Fuller, Elliot J.; Hughart, David R.; Parekh, Ojas D.; DeBenedictis, Erik; Goeke, Ronald S.; Hsia, Alexander W.; Aimone, James B.; James, Conrad D.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Fuller, Elliot J.; Talin, A.A.; El Gabaly Marquez, Farid E.; Jacobs-Gedrim, Robin B.; Hughart, David R.; Goeke, Ronald S.; Hsia, Alexander W.; Schiek, Richard S.; Plimpton, Steven J.; James, Conrad D.

Abstract not provided.

IEEE Electron Device Letters

Leonard, Francois L.; Dickerson, Jeramy R.; King, M.P.; Armstrong, Andrew A.; Fischer, Arthur J.; Allerman, A.A.; Kaplar, R.J.; Talin, A.A.

Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. While a variety of edge termination designs have been proposed, the optimization of such designs is challenging due to many parameters that impact their effectiveness. While modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.

El Gabaly Marquez, Farid E.; Fuller, Elliot J.; Leonard, Francois L.; Talin, A.A.

Abstract not provided.

Talin, A.A.; Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Marinella, Matthew J.; Agarwal, Sapan A.; Leonard, Francois L.

Abstract not provided.

Kaplar, Robert K.; Kizilyalli, Isik C.; Aktas, Ozgur A.; Armstrong, Andrew A.; King, Michael P.; Vizkelethy, Gyorgy V.; Wampler, William R.; Fleming, Robert M.; Dickerson, Jeramy R.; Leonard, Francois L.; Talin, A.A.; Celio, Kimberlee C.; Neely, Jason C.; Zutavern, Fred J.; Mauch, Daniel L.

Abstract not provided.