Publications

Li, Yiyang; Fuller, Elliot J.; Agarwal, Sapan A.; Talin, A.A.

Abstract not provided.

Chemistry of Materials

Stewart, David M.; Pearse, Alexander J.; Kim, Nam S.; Fuller, Elliot J.; Talin, A.A.; Gregorczyk, Keith; Lee, Sang B.; Rubloff, Gary W.

Major advances in thin-film solid-state batteries (TFSSBs) may capitalize on 3D structuring using high-aspect-ratio substrates such as nanoscale pits, pores, trenches, flexible polymers, and textiles. This will require conformal processes such as atomic layer deposition (ALD) for every active functional component of the battery. Here we explore the deposition and electrochemical properties of SnO2, SnNy, and SnOxNy thin films as TFSSB anode materials, grown by ALD using tetrakisdimethylamido(tin), H2O, and N2 plasma as precursors. By controlling the dose ratio between H2O and N2, the N-O fraction can be tuned between 0% N and 95% N. The electrochemical properties of these materials were tested across a composition range varying from pure SnO2, to SnON intermediates, and pure SnNy. In TFSSBs, the SnNy anodes are found to be more stable during cycling than the SnO2 or SnOxNy films, with an initial reversible capacity beyond that of Li-Sn alloying, retaining 75% of their capacity over 200 cycles compared to only 50% for SnO2. Furthermore, the performance of the SnOxNy anodes indicates that SnNy anodes should not be negatively impacted by small levels of O contamination.

Talin, A.A.

Abstract not provided.

Nano Letters

Yulaev, Alexander; Oleshko, Vladimir; Haney, Paul; Liu, Jialin; Qi, Yue; Talin, A.A.; Leite, Marina S.; Kolmakov, Andrei

Li metal is the preferred anode material for all-solid-state Li batteries. However, a stable plating and stripping of Li metal at the anode-solid electrolyte interface remains a significant challenge particularly at practically feasible current densities. This problem usually relates to high and/or inhomogeneous Li-electrode-electrolyte interfacial impedance and formation and growth of high-aspect-ratio dendritic Li deposits at the electrode-electrolyte interface, which eventually shunt the battery. To better understand details of Li metal plating, we use operando electron microscopy and Auger spectroscopy to probe nucleation, growth, and stripping of Li metal during cycling of a model solid-state Li battery as a function of current density and oxygen pressure. We find a linear correlation between the nucleation density of Li clusters and the charging rate in an ultrahigh vacuum, which agrees with a classical nucleation and growth model. Moreover, the trace amount of oxidizing gas (≈10-6 Pa of O2) promotes the Li growth in a form of nanowires due to a fine balance between the ion current density and a growth rate of a thin lithium-oxide shell on the surface of the metallic Li. Interestingly, increasing the partial pressure of O2 to 10-5 Pa resumes Li plating in a form of 3D particles. Our results demonstrate the importance of trace amounts of preexisting or ambient oxidizing species on lithiation processes in solid-state batteries.

Leonard, Francois L.; Yu, Wenlong; Celio, Kimberlee C.; Medlin, Douglas L.; Sugar, Joshua D.; Talin, A.A.; Pan, Wei P.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Fuller, Elliot J.; Talin, A.A.; James, Conrad D.

Abstract not provided.

Armstrong, Andrew A.; Feezel, Daniel F.; Allerman, A.A.; Pickrell, Gregory P.; Monavarian, Morteza M.; Stricklin, Isaac S.; Crawford, Mary H.; Celio, Kimberlee C.; Leonard, Francois L.; Talin, A.A.

Abstract not provided.

Fuller, Elliot J.; Keene, Scott T.; Wang, Zhongrui W.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Niroula, John N.; Bailey, Chris B.; Sohi, Umar S.; Tuchman, Yaakov T.; Melianas, Armantas M.; James, Conrad D.; Marinella, Matthew J.; Yang, J.J.; Salleo, Alberto S.; Talin, A.A.

Abstract not provided.

Talin, A.A.

Abstract not provided.

Fuller, Elliot J.; Keene, Scott T.; Wang, Zhongrui W.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Niroula, John N.; Bayley, Chris B.; Sohi, Umar S.; Tuchman, Yaakov T.; Melianas, Armantas M.; James, Conrad D.; Marinella, Matthew J.; Talin, A.A.

Abstract not provided.

Allendorf, Mark D.; Stavila, Vitalie S.; Talin, A.A.; Jones, Christopher G.; Ullman, Andrew M.

Abstract not provided.

ACS Applied Materials and Interfaces

Leonard, Francois L.; Yu, Wenlong; Celio, Kimberlee C.; Medlin, Douglas L.; Sugar, Joshua D.; Talin, A.A.; Pan, Wei P.

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

Leung, Kevin L.; Talin, A.A.; Fuller, Elliot J.; Pearse, Alex P.; rubloff, g r.

Abstract not provided.

Nano Letters

Chae, Jungseok; An, Sangmin; Ramer, Georg; Stavila, Vitalie S.; Holland, Glenn; Yoon, Yohan; Talin, A.A.; Allendorf, Mark D.; Aksyuk, Vladimir A.; Centrone, Andrea

The atomic force microscope (AFM) offers a rich observation window on the nanoscale, yet many dynamic phenomena are too fast and too weak for direct AFM detection. Integrated cavity-optomechanics is revolutionizing micromechanical sensing; however, it has not yet impacted AFM. Here, we make a groundbreaking advance by fabricating picogram-scale probes integrated with photonic resonators to realize functional AFM detection that achieve high temporal resolution (<10 ns) and picometer vertical displacement uncertainty simultaneously. The ability to capture fast events with high precision is leveraged to measure the thermal conductivity (η), for the first time, concurrently with chemical composition at the nanoscale in photothermal induced resonance experiments. The intrinsic η of metal-organic-framework individual microcrystals, not measurable by macroscale techniques, is obtained with a small measurement uncertainty (8%). The improved sensitivity (50×) increases the measurement throughput 2500-fold and enables chemical composition measurement of molecular monolayer-thin samples. Our paradigm-shifting photonic readout for small probes breaks the common trade-off between AFM measurement precision and ability to capture transient events, thus transforming the ability to observe nanoscale dynamics in materials.

Talin, A.A.; Jones, Reese E.; Spataru, Dan C.; Leonard, Francois L.; He, Yuping H.; Foster, Michael E.; Allendorf, Mark D.; Stavila, Vitalie S.

Metal organic frameworks (MOFs) are extended, nanoporous crystalline compounds consisting of metal ions interconnected by organic ligands. Their synthetic versatility suggest a disruptive class of opto - electronic materials with a high degree of electrical tunability and without the property - degrading disorder of organic conductors. In this project we determined the factors controlling charge and energy transport in MOFs and evaluated their potential for thermoelectric energy conversion. Two strategies for a chieving electronic conductivity in MOFs were explored: 1) using redox active 'guest' molecules introduced into the pores to dope the framework via charge - transfer coupling (Guest@MOF), 2) metal organic graphene analogs (MOGs) with dispersive band structur es arising from strong electronic overlap between the MOG metal ions and its coordinating linker groups. Inkjet deposition methods were developed to facilitate integration of the guest@MOF and MOG materials into practical devices.

ECS Transactions (Online)

He, Yuping H.; Talin, A.A.; Allendorf, Mark D.

Metal organic frameworks (MOFs) have recently attracted great attentions for the thermoelectric (TE) applications, owing to their intrinsic low thermal conductivity, but their TE efficiencies are still low due to the poor electronic transport properties. Here, various synthetic strategies have been designed to optimize the electronic properties of MOFs. Using a series of first principle calculations and band theory, we explore the effect of structural topology and redox matching between the metal and coordinated atoms on the TE transport properties. In conclusion, the presented results provide a fundamental guidance for optimizing electronic charge transport of existing MOFs, and for designing yet to be discovered conductive MOFs for thermoelectric applications.

Digest of Technical Papers - Symposium on VLSI Technology

Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; Fuller, Elliot J.; Talin, A.A.; James, Conrad D.; Plimpton, Steven J.; Marinella, Matthew J.

Analog resistive memories promise to reduce the energy of neural networks by orders of magnitude. However, the write variability and write nonlinearity of current devices prevent neural networks from training to high accuracy. We present a novel periodic carry method that uses a positional number system to overcome this while maintaining the benefit of parallel analog matrix operations. We demonstrate how noisy, nonlinear TaOx devices that could only train to 80% accuracy on MNIST, can now reach 97% accuracy, only 1% away from an ideal numeric accuracy of 98%. On a file type dataset, the TaOx devices achieve ideal numeric accuracy. In addition, low noise, linear Li1-xCoO2 devices train to ideal numeric accuracies using periodic carry on both datasets.

IEEE Electron Device Letters

Collins, K.C.; King, M.P.; Dickerson, Jeramy R.; Vizkelethy, Gyorgy V.; Armstrong, Andrew A.; Fischer, Arthur J.; Allerman, A.A.; Kaplar, Robert K.; Aktas, O.; Kizilyalli, I.C.; Talin, A.A.; Léonard, F.

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination tomitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN PIN diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.

Talin, A.A.

Abstract not provided.

Celio, Kimberlee C.; Leonard, Francois L.; Dickerson, Jeramy R.; King, Michael P.; Crawford, Mary H.; Armstrong, Andrew A.; Allerman, A.A.; Aktas, Ozgur A.; Kizilyalli, Isik C.; Talin, A.A.

Abstract not provided.

Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Leonard, Francois L.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Marinella, Matthew J.; Talin, A.A.

Abstract not provided.

Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; Fuller, Elliot J.; Talin, A.A.; James, Conrad D.; Plimpton, Steven J.; Marinella, Matthew J.

Abstract not provided.

He, Yuping H.; Talin, A.A.; Stavila, Vitalie S.

Abstract not provided.

Chemistry of Materials

Pearse, Alexander J.; Schmitt, Thomas E.; Fuller, Elliot J.; El Gabaly Marquez, Farid E.; Lin, Chuan F.; Gerasopoulos, Konstantinos; Kozen, Alexander C.; Talin, A.A.; Rubloff, Gary; Gregorczyk, Keith E.

Several active areas of research in novel energy storage technologies, including three-dimensional solid state batteries and passivation coatings for reactive battery electrode components, require conformal solid state electrolytes. We describe an atypical atomic layer deposition (ALD) process for a member of the lithium phosphorus oxynitride (LiPON) family, which is employed as a thin film lithium-conducting solid electrolyte. The reaction between lithium tert-butoxide (LiOtBu) and diethyl phosphoramidate (DEPA) produces conformal, ionically conductive thin films with a stoichiometry close to Li2PO2N between 250 and 300 °C. Unusually, the P/N ratio of the films is always 1, indicative of a particular polymorph of LiPON that closely resembles a polyphosphazene. Films grown at 300 °C have an ionic conductivity of (6.51 ± 0.36) × 10-7 S/cm at 35 °C and are functionally electrochemically stable in the window from 0 to 5.3 V versus Li/Li+. We demonstrate the viability of the ALD-grown electrolyte by integrating it into full solid state batteries, including thin film devices using LiCoO2 as the cathode and Si as the anode operating at up to 1 mA/cm2. The high quality of the ALD growth process allows pinhole-free deposition even on rough crystalline surfaces, and we demonstrate the successful fabrication and operation of thin film batteries with ultrathin (<100 nm) solid state electrolytes. Finally, we show an additional application of the moderate-temperature ALD process by demonstrating a flexible solid state battery fabricated on a polymer substrate.

Kaplar, Robert K.; Allerman, A.A.; Armstrong, Andrew A.; Crawford, Mary H.; Baca, A.G.; Flicker, Jack D.; Pickrell, Gregory P.; Dickerson, Jeramy R.; Klein, Brianna A.; Douglas, Erica A.; Miller, Mary A.; Leonard, Francois L.; Talin, A.A.; Celio, Kimberlee C.; Reza, Shahed R.; King, Michael P.; Vizkelethy, Gyorgy V.; Coltrin, Michael E.

Abstract not provided.