Publications

Talin, A.A.; Fuller, Elliot J.

Abstract not provided.

Journal of the Electrochemical Society

Tian, Hong K.; Chakraborty, Aritra; Talin, A.A.; Eisenlohr, Philip; Qi, Yue

The mechanical degradation of all-solid-state Li-ion batteries (ASSLBs) is expected to be more severe than that in traditional Li-ion batteries with liquid electrolytes due to the additional mechanical constraints imposed by the solid electrolyte on the deformation of electrodes. Cracks and fractures could occur both inside the solid electrolyte (SE) and at the SE/electrode interfconce. A coupled electrochemical-mechanical model was developed and solved by the Finite Element Method (FEM) to evaluate the stress development in ASSLBs. Two sources of volume change were considered, namely the expansion/shrinkage of electrodes due to lithium concentration change and the interphase formation at the SE/electrode interface due to the decomposition of SEs. The most plausible solid electrolyte decomposition reactions and their associated volume change were predicted by density functional theory (DFT) calculations. It was found that the stress associated with a volume change due to solid electrolyte decomposition can be much more significant than that of electrode volumetric changes associated with Li insertion/extraction. This model can be used to design 3D ASSLB architectures to minimize their internal stress generation.

Nano Letters

Li, Yiyang; Van De Groep, Jorik; Talin, A.A.; Brongersma, Mark L.

Plasmonic antennas and metasurfaces can effectively control light-matter interactions, and this facilitates a deterministic design of optical materials properties, including structural color. However, these optical properties are generally fixed after synthesis and fabrication, while many modern-day optics applications require active, low-power, and nonvolatile tuning. These needs have spurred broad research activities aimed at identifying materials and resonant structures capable of achieving large, dynamic changes in optical properties, especially in the challenging visible spectral range. In this work, we demonstrate dynamic tuning of polarization-dependent gap plasmon resonators that contain the electrochromic oxide WO3. Its refractive index in the visible changes continuously from n = 2.1 to 1.9 upon electrochemical lithium insertion and removal in a solid-state device. By incorporating WO3 into a gap plasmon resonator, the resonant wavelength can be shifted continuously and reversibly by up to 58 nm with less than 2 V electrochemical bias voltage. The resonator can remain in a tuned state for tens of minutes under open circuit conditions.

IBM Journal of Research and Development

Fuller, Elliot J.; Li, Y.; Bennet, C.; Keene, S.T.; Melianas, A.; Agarwal, S.; Marinella, M.J.; Salleo, A.; Talin, A.A.

Efficiency bottlenecks inherent to conventional computing in executing neural algorithms have spurred the development of novel devices capable of 'in-memory' computing. Commonly known as 'memristors,' a variety of device concepts including conducting bridge, vacancy filament, phase change, and other types have been proposed as promising elements in artificial neural networks for executing inference and learning algorithms. In this article, we review the recent advances in memristor technology for neuromorphic computing and discuss strategies for addressing the most significant performance challenges, including nonlinearity, high read/write currents, and endurance. As an alternative to two-terminal memristors, we introduce the three-terminal electrochemical memory based on the redox transistor (RT), which uses a gate to tune the redox state of the channel. Decoupling the 'read' and 'write' operations using a third terminal and storage of information as a charge-compensated redox reaction in the bulk of the transistor enables high-density information storage. These properties enable low-energy operation without compromising analog performance and nonvolatility. We discuss the RT operating mechanisms using organic and inorganic materials, approaches for array integration, and prospects for achieving the device density and switching speeds necessary to make electrochemical memory competitive with established digital technology.

ACS Applied Materials and Interfaces

Li, Yiyang; Fuller, Elliot J.; Asapu, Shiva; Agarwal, Sapan A.; Kurita, Tomochika; Yang, J.J.; Talin, A.A.

Neuromorphic computers based on analogue neural networks aim to substantially lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. Here, we develop an inorganic redox transistor based on electrochemical lithium-ion insertion into LiXTiO2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the LiXTiO2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation regime.

Allerman, A.A.; Armstrong, Andrew A.; Pickrell, Gregory P.; Crawford, Mary H.; Talin, A.A.; Leonard, Francois L.; Celio, Kimberlee C.; Feezell, Daniel F.; Aragon, A.A.; Kaplar, Robert K.

Abstract not provided.

Leo, Javier A.; Paisley, Elizabeth A.; Smith, Sean S.; Biedermann, Laura B.; Ihlefeld, Jon F.; Maria, Jon-Paul M.; Ferri, Kevin F.; McKenzie, Bonnie B.; Apodaca, Michael J.; Finnegan, Patrick S.; Fuller, Elliot J.; Talin, A.A.; Celio , Kim C.

Abstract not provided.

Krishnakumar, Raga K.; Hirakawa, Matthew H.; Tjahjono, Nikki T.; Talin, A.A.; Casadevall, Carlos C.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hughart, David R.; Richter, Isaac R.; Hsia, Alexander W.; Fuller, Elliot J.; Talin, A.A.; Goeke, Ronald S.; Plimpton, Steven J.; James, Conrad D.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hughart, David R.; Richter, Isaac R.; Hsia, Alexander W.; Fuller, Elliot J.; Talin, A.A.; Goeke, Ronald S.; Plimpton, Steven J.; James, Conrad D.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; Richter, Isaac R.; Fuller, Elliot J.; Plimpton, Steven J.; Talin, A.A.; James, Conrad D.

Abstract not provided.

Talin, A.A.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; Richter, Isaac R.; Fuller, Elliot J.; Plimpton, Steven J.; Talin, A.A.; James, Conrad D.

Abstract not provided.

Talin, A.A.; Armstrong, Andrew A.; Allerman, A.A.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Niroula, John N.; Goeke, Ronald S.; Hsia, Alexander W.; Fuller, Elliot J.; Talin, A.A.; James, Conrad D.

Abstract not provided.

Marinella, Matthew J.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; James, Conrad D.; Agarwal, Sapan A.; Bortz-Johnson, Asa J.; Fuller, Elliot J.; Talin, A.A.; Barnaby, Hugh J.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Jacobs-Gedrim, Robin B.; Hughart, David R.; Bennett, Christopher H.; Hsia, Alexander W.; Fuller, Elliot J.; Talin, A.A.; Barnaby, Hugh J.

Abstract not provided.

Marinella, Matthew J.; Bennett, Christopher H.; Jacobs-Gedrim, Robin B.; Hsia, Alexander W.; Hughart, David R.; James, Conrad D.; Vizkelethy, Gyorgy V.; Bielejec, Edward S.; Agarwal, Sapan A.; Fuller, Elliot J.; Talin, A.A.; Taggart, Jennifer T.; Barnaby, Hugh J.

Abstract not provided.

Pickrell, Gregory P.; Armstrong, Andrew A.; Allerman, A.A.; Crawford, Mary H.; feezell, d f.; Monavarian, M M.; Aragon, A.AA.; Talin, A.A.; Leonard, Francois L.; Celio, Kimberlee C.; Glaser, Caleb E.; Kempisty, Jeffrey M.; Abate, Vincent M.

Abstract not provided.

Casadevall, Carlos C.; Calvo, James J.; Li, Yiyang; Fuller, Elliot J.; Hirakawa, Matthew H.; Krishnakumar, Raga K.; Talin, A.A.

Abstract not provided.

Isele, Erik I.; Li, Yiyang; Fuller, Elliot J.; Talin, A.A.

Abstract not provided.

Monavarian, M.M.; Pickrell, Gregory P.; Aragon, A.A.; Stricklin, I.S.; Crawford, Mary H.; Allerman, A.A.; Celio, Kimberlee C.; Leonard, Francois L.; Talin, A.A.; Armstrong, Andrew A.; Feezell, Daniel F.

Abstract not provided.

Talin, A.A.

Abstract not provided.

Talin, A.A.

Abstract not provided.

Armstrong, Andrew A.; Allerman, A.A.; Pickrell, Gregory P.; Crawford, Mary H.; Talin, A.A.; Leonard, Francois L.; Celio, Kimberlee C.; Feezell, Daniel F.; Monavarian, M.M.; Stricklin, Isaac S.; Aragon, A.A.

Abstract not provided.