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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with 80-nm Gates

IEEE Electron Device Letters

Baca, A.G.; Klein, Brianna A.; Wendt, J.R.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Kaplar, Robert K.

Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.

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TYPE Journal Article YEAR 2019
ScopusOSTIDOI

Integrated optical probing of the thermal dynamics of wide bandgap power electronics

ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019

Lundh, James S.; Song, Yiwen; Chatterjee, Bikram; Baca, A.G.; Kaplar, Robert K.; Armstrong, Andrew A.; Allerman, A.A.; Kim, Hyungtak; Choi, Sukwon

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power (SWaP) of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current (DC) measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to sub-microsecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

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TYPE Conference Poster YEAR 2019
ScopusOSTIDOI

TCAD simulation of a 1 kV 10 A GaN MISFET Device

Dickerson, Jeramy R.; Dickerson, Jeramy R.; Dickerson, Jeramy R.; Dickerson, Jeramy R.; Kaplar, Robert K.; Kaplar, Robert K.; Kaplar, Robert K.; Kaplar, Robert K.; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Armstrong, Andrew A.; Armstrong, Andrew A.; Armstrong, Andrew A.; Armstrong, Andrew A.; Crawford, Mary H.; Crawford, Mary H.; Crawford, Mary H.; Crawford, Mary H.; Allerman, A.A.; Allerman, A.A.; Allerman, A.A.; Allerman, A.A.; Pickrell, Gregory P.; Pickrell, Gregory P.; Pickrell, Gregory P.; Pickrell, Gregory P.

Abstract not provided.

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TYPE Conference Poster YEAR 2018
OSTI
Results 76–100 of 318
Results 76–100 of 318