He, Yuping H.; Cubuk, Ekin D.; Allendorf, Mark D.; Reed, Evan J.
Emerging applications of metal-organic frameworks (MOFs) in electronic devices will benefit from the design and synthesis of intrinsically, highly electronically conductive MOFs. However, very few are known to exist. It is a challenging task to search for electronically conductive MOFs within the tens of thousands of reported MOF structures. Using a new strategy (i.e., transfer learning) of combining machine learning techniques, statistical multivoting, and ab initio calculations, we screened 2932 MOFs and identified 6 MOF crystal structures that are metallic at the level of semilocal DFT band theory: Mn2[Re6X8(CN)6]4 (X = S, Se,Te), Mn[Re3Te4(CN)3], Hg[SCN]4Co[NCS]4, and CdC4. Five of these structures have been synthesized and reported in the literature, but their electrical characterization has not been reported. Our work demonstrates the potential power of machine learning in materials science to aid in down-selecting from large numbers of potential candidates and provides the information and guidance to accelerate the discovery of novel advanced materials.
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contact is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. This study presents a combination of experimental and theoretical efforts to understand, design, and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, an experimental approach is developed to fabricate low resistivity metal contacts to V-telluride thin film superlattices, achieving a 100-fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy show unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, the improved contacts are harnessed to realize an improved high-performance thermoelectric cooling module.
Metal organic frameworks (MOFs) are extended, nanoporous crystalline compounds consisting of metal ions interconnected by organic ligands. Their synthetic versatility suggest a disruptive class of opto - electronic materials with a high degree of electrical tunability and without the property - degrading disorder of organic conductors. In this project we determined the factors controlling charge and energy transport in MOFs and evaluated their potential for thermoelectric energy conversion. Two strategies for a chieving electronic conductivity in MOFs were explored: 1) using redox active 'guest' molecules introduced into the pores to dope the framework via charge - transfer coupling (Guest@MOF), 2) metal organic graphene analogs (MOGs) with dispersive band structur es arising from strong electronic overlap between the MOG metal ions and its coordinating linker groups. Inkjet deposition methods were developed to facilitate integration of the guest@MOF and MOG materials into practical devices.
Metal organic frameworks (MOFs) have recently attracted great attentions for the thermoelectric (TE) applications, owing to their intrinsic low thermal conductivity, but their TE efficiencies are still low due to the poor electronic transport properties. Here, various synthetic strategies have been designed to optimize the electronic properties of MOFs. Using a series of first principle calculations and band theory, we explore the effect of structural topology and redox matching between the metal and coordinated atoms on the TE transport properties. In conclusion, the presented results provide a fundamental guidance for optimizing electronic charge transport of existing MOFs, and for designing yet to be discovered conductive MOFs for thermoelectric applications.
Here, we carried out calculations based on density functional theory to investigate the electronic, vibrational, and dielectric properties of mixed halide perovskites CH3NH3AI3–xClx with A = Pb and Sn. Computed free energies indicated that Cl mixed systems may be formed only for Cl concentrations not exceeding 1019 cm–3, and phonon calculations showed that the disorder induced in the host lattice by the presence of a smaller halogen is responsible for mechanical instabilities. However, we found that the presence of chloride may be beneficial to the electronic properties of the perovskites. Chloride anions cause the organic cations to be displaced from the center of the cage; such a displacement induces preferential orientations of the cation dipole, which in turn are responsible for notable changes in the dielectric properties of the material and possibly for the formation of local ferroelectric domains. The latter are instrumental in separating electron hole pairs and hence in contributing to long charge-carrier diffusion lengths, in spite of polarons being more likely formed in mixed perovksites than in CH3NH3AI3.