Publications

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We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

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A silicon photonics based integrated optical phase locked loop is utilized to synchronize a 10.2 GHz voltage controlled oscillator with a 509 MHz mode locked laser, achieving 32 fs integrated jitter over 300 kHz bandwidth.

We present a 2 x 2 silicon thermo-optic switch with a switching power of only {approx}12.5 mW and a response time of 5.4 {micro}s with an extinction ratio of {approx}>20 dB across the C and L bands.

By comparing the frequency deviations of the TE and TM modes of identically designed silicon microdisk-resonators across a wafer, we demonstrate that layer thickness non-uniformity is the dominant cause of fabrication-induced microdisk-resonator frequency deviation. © 2009 Optical Society of America.

A new class of microphotonic-resonators, Adiabatic Resonant Microrings (ARMs), is introduced. The ARM resonator geometry enables heater elements to be formed within the resonator, simultaneously enabling record low-power (4.4μW/GHz) and record high-speed (1μs) thermal tuning. ©2009 Optical Society of America.

The advent of high quality factor (Q) microphotonic-resonators has led to the demonstration of high-fidelity optical sensors of many physical phenomena (e.g. mechanical, chemical, and biological sensing) often with far better sensitivity than traditional techniques. Microphotonic-resonators also offer potential advantages as uncooled thermal detectors including significantly better noise performance, smaller pixel size, and faster response times than current thermal detectors. In particular, microphotonic thermal detectors do not suffer from Johnson noise in the sensor, offer far greater responsivity, and greater thermal isolation as they do not require metallic leads to the sensing element. Such advantages make the prospect of a microphotonic thermal imager highly attractive. Here, we introduce the microphotonic thermal detection technique, present the theoretical basis for the approach, discuss our progress on the development of this technology and consider future directions for thermal microphotonic imaging. Already we have demonstrated viability of device fabrication with the successful demonstration of a 20{micro}m pixel, and a scalable readout technique. Further, to date, we have achieved internal noise performance (NEP{sub Internal} < 1pW/{radical}Hz) in a 20{micro}m pixel thereby exceeding the noise performance of the best microbolometers while simultaneously demonstrating a thermal time constant ({tau} = 2ms) that is five times faster. In all, this results in an internal detectivity of D*{sub internal} = 2 x 10{sup 9}cm {center_dot} {radical}Hz/W, while roughly a factor of four better than the best uncooled commercial microbolometers, future demonstrations should enable another order of magnitude in sensitivity. While much work remains to achieve the level of maturity required for a deployable technology, already, microphotonic thermal detection has demonstrated considerable potential.

Microdisk resonators for use as low energy modulators in telecom and datacom applications have been fabricated using vertical PN junctions which operate in reverse bias. These devices have demonstrated the lowest energy/bit thus far. In this paper we show that the reverse biased PN junction diodes follow the analytical depletion approximation based on numerical simulation.

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