Multi-Layered Solid State Neutron Sensor
Abstract not provided.
Publications
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation
2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018
This study examines the single-event response of Xilinx 16nm FinFET UltraScale+ FPGA and MPSoC device families. Heavy-ion single-event latch-up, single-event upsets in configuration SRAM, BlockRAM™ memories, and flip-flops, and neutron-induced single-event latch-up results are provided.
TID-Induced Leakage and Drive Characteristics of Planar 22-nm PDSOI and 14-nm Bulk and Quasi-SOI FinFET Devices
Abstract not provided.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation
Abstract not provided.
Single-Event Characterization of the 16 nm FinFET Xilinx Kintex UltraScale+ in Heavy Ions
Abstract not provided.
Heavy-Ion Irradiation of the Xilinx Kintex UltraScale+ FPGA
Abstract not provided.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Field-Programmable Gate Array and Multi-Processor System-on-Chip Devices with Heavy Ion and Neutron Irradiation
Abstract not provided.
Leakage and Drive Characteristics of Planar 22-nm Partially-Depleted Silicon-on-Insulator and 14-nm Bulk and Quasi-Silicon-on-Insulator FinFET Devices
Abstract not provided.
Different approaches for enhancing the thermal stability of Ge2Sb2Te5 films
Abstract not provided.
Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance
Abstract not provided.
10 Results