This article describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-$\textit{Q}$ SiN cavity
Among Professor Arthur Gossard's many contributions to crystal growth are those resulting in important improvements in the quality and performance of quantum-well and quantum-dot semiconductor lasers. In celebration of his 85th birthday, we review the development of a semiconductor laser theory that is motivated and guided, in part, by those advances. This theory combines condensed matter theory and laser physics to provide understanding at a microscopic level, i.e., in terms of electrons and holes, and their interaction with the radiation field while influenced by the lattice.
A frequency-domain description of semiconductor mode-locked lasers is presented. The approach provides self-consistent accounting of locking mechanism, gain saturation, mode competition and carrier-induced refractive index, in addition to directly connecting mode-locking performance to the bandstructure.
Grillot, Frédéric; Norman, Justin C.; Duan, Jianan; Zhang, Zeyu; Dong, Bozhang; Huang, Heming; Chow, Weng W.; Bowers, John E.
Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.
Chow, Weng W.; Zhang, Zeyu; Norman, Justin C.; Liu, Songtao; Bowers, John E.
This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.
Our goal was to develop an integrated platform for electrical control of SiV defects in diamond. The understanding and techniques we discover for electrical control have direct relevance for scalable color center based devices. More fundamentally, they can serve as a basis for developing diamond light sources and exploring color center transitions previously understood as inaccessible. While we did not meet all these goals we did develop a unique set of capabilities that allowed Sandia to distinct itself both internally and through continuing external collaborations.
International Conference on Transparent Optical Networks
Chow, Weng W.; Kreinberg, S.; Wolters, J.; Schneider, C.; Gies, C.; Jahnke, F.; Hofling, S.; Kamp, M.; Reitzenstein, S.
We report on a theoretical and experimental study performed on AlAs/GaAs micropillar cavities containing InGaAs quantum dots as active medium. The devices have the interesting property of having almost all emission (spontaneous and stimulated) channelled into one cavity mode. They are excellent experimental platforms for studying laser physics because their emission behaviours question our understanding of lasing action. Analysis of spectrally-resolved photoluminescence and photon autocorrelation will be discussed and a physically definitive criterion for lasing applicable to all systems will be presented.
Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active medium consisting of a layer of InGaAs quantum dots (QDs) and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode (high ß-factor). This paper demonstrates that the usual criterion for lasing with a conventional (low ß-factor) cavity, that is, a sharp non-linearity in the input-output curve accompanied by noticeable linewidth narrowing, has to be reinforced by the equal-time second-order photon autocorrelation function to confirm lasing. The paper also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance, a manifestation of the correlations possible in high-ß microcavities operating with QDs. In terms of consolidating the collected data and identifying the physics underlying laser action, both theory and experiment suggest a sole dependence on intracavity photon number. Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation, for devices ranging from light-emitting diodes (LEDs) and cavity-enhanced LEDs to lasers, lying on the same two curves: one for linewidth narrowing versus intracavity photon number and the other for g(2)(0) versus intracavity photon number.
We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.
Journal of the Optical Society of America B: Optical Physics
Naumann, Nicolas L.; Droenner, Leon; Chow, Weng W.; Kabuss, Julia; Carmele, Alexander
We investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron-phonon coupling. We discuss bistabilities, lasing, and phonon damping, and recover the same qualitative behaviors for the semiconductor and the optomechanical cases expected for low driving strengths. However, in contrast to the optomechanical case, distinct signatures of higher order processes arise in the semiconductor model.
In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. Here, we study the influence of two important quantum-dot material parameters, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. However, by minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.
In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR) lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR) at a frequency higher than the modulation bandwidth of the corresponding single-section laser. Design guidelines will be proposed, and dynamic small and large signal simulations results, calculated using a finite difference traveling wave (FDTW) numerical simulator, will be discussed to confirm the design results. The effectiveness of the design procedure is verified in a structure with PPR frequency at 35GHz allowing one to obtain an open eye diagram for a non-return-to-zero (NRZ) digital signal up to 80 GHz. Furthermore, the investigation of the rich dynamics of this structure shows that with proper bias conditions, it is possible to obtain also a tunable self-pulsating signal in a frequency range related to the PPR design.
The gain-current relationships for quantum-dot and quantum-well lasers are compared experimentally and theoretically. Rigorous treatment of collision effects using quantum-kinetic equations improves precision in determination of extrinsic parameters and prediction of performance.
Chow, Weng W.; Liu, Alan Y.; Gossard, Arthur C.; Bowers, John E.
We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. We then extract the nonradiative recombination current associated with the quantum-dot active region from a comparison of measured and calculated gain versus current relations.
This letter analyzes the proposal to mitigate the efficiency droop in solid-state light emitters by replacing InGaN light-emitting diodes (LEDs) with lasers. The argument in favor of this approach is that carrier-population clamping after the onset of lasing limits carrier loss to that at threshold, while stimulated emission continues to grow with injection current. A fully quantized (carriers and light) theory that is applicable to LEDs and lasers (above and below threshold) is used to obtain a quantitative evaluation. The results confirm the potential advantage of higher laser output power and efficiency above lasing threshold, while also indicating disadvantages including low efficiency prior to lasing onset, sensitivity of lasing threshold to temperature, and the effects of catastrophic laser failure. A solution to some of these concerns is suggested that takes advantage of recent developments in nanolasers.
There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.
Chow, Weng W.; Straatsma, Cameron J.; Anderson, Dana Z.
A model for studying atomtronic devices and circuits based on finite-temperature Bose-condensed gases is presented. The approach involves numerically solving equations of motion for atomic populations and coherences, derived using the Bose-Hubbard Hamiltonian and the Heisenberg picture. The resulting cluster expansion is truncated at a level giving balance between physics rigor and numerical demand mitigation. This approach allows parametric studies involving time scales that cover both the rapid population dynamics relevant to nonequilibrium state evolution, as well as the much longer time durations typical for reaching steady-state device operation. This model is demonstrated by studying the evolution of a Bose-condensed gas in the presence of atom injection and extraction in a double-well potential. In this configuration phase locking between condensates in each well of the potential is readily observed, and its influence on the evolution of the system is studied.
Single quantum dots (QDs) are frequently used as single-photon sources, taking advantage of the final exciton decay in a cascade that produces energetically detuned photons. We propose and analyze a new concept of single-photon source, namely, a few-QD microcavity system driven close to, but below the lasing threshold under strong excitation. Surprisingly, even for two or three QDs inside a cavity, antibunching is observed. To quantify the results, we find that a classification of single-photon emission in terms of antibunching in the autocorrelation function g(2)(0) is insufficient and more details of the photon statistics are required. Our investigations are based on a quantum-optical theory that we solve to obtain the density operator for the quantum-mechanical active medium and radiation field.
A quantum-optical model is applied to address the question of criteria for lasing in a threshold less laser where the intensity jump, customarily used to indicate transition to lasing, is missing.
We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasiequilibrium conditions and current injection. Comparing different structures, we find that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum dot active region too fast to sustain inversion. The tradeoff between different extraction/injection pathways is discussed. Comparing the modal gain to a standard quantum-well structure as used in quantum cascade lasers, our calculations predict reduced threshold current densities of the quantum dot structure for comparable modal gain. Such a comparable modal gain can, however, only be achieved for an inhomogeneous broadening of a quantum-dot ensemble that is close to the lower limit achievable today using self-organized growth.
We have theoretically and experimentally investigated the possibility of single atom deposition using laser cooled sources. In our theoretical work, we investigated an atom source composed of out-coupling from a Bose-Einstein condensate in a trap. A model was developed for Bose- Einstein-condensate-based devices. To illustrate its application, a 2-well system is studied. The results show interesting and possibly useful differences between operation with coherent (phased-locked) and incoherent (unlocked) population transfer between levels in the two wells. The two modes of operation are governed by an interplay among scattering, energy renormalizations and coupling between wells. In parallel, we have experimentally investigated the possibility of controlled deposition of single cesium atoms onto surfaces using optical tweezers. We have measured the rate limit for translation of single atoms in optical tweezers to be 45 mm/s for stepped translation, and have constructed an apparatus for deposition of single atoms on a sapphire substrate for future work.
A revolution in lighting is well on its way. Rewind the clock a year or so and the prices of LED bulbs made many shoppers wince. But now it is possible to get a high-quality 60 W equivalent for well under $10, and that’s allowing sales of LED bulbs incorporating chips from the likes of Cree and Philips Lumileds to take off. Although these solid-state bulbs are much more pricey than incandescents, which have largely disappeared from shelves due to legislation, they more than make up for that additional up-front cost with a substantial trimming of the electricity bill. It is a more tricky decision, however, whether it makes more sense to buy an LED bulb or a cheaper compact fluorescent (CFL). In terms of durability, adaptability and environmental impact, the solid-state bulb is the clear winner. But both types of light are similar in the efficiency stakes, and thus the running costs.
Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.
We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.
We present a photonic integrated circuit (PIC) composed of two strongly coupled lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz.
Optical nonlinearities and quantum coherences have the potential to enable efficient, high-temperature generation of coherent THz radiation. This LDRD proposal involves the exploration of the underlying physics using intersubband transitions in a quantum cascade structure. Success in the device physics aspect will give Sandia the state-of-the-art technology for high-temperature THz quantum cascade lasers. These lasers are useful for imaging and spectroscopy in medicine and national defense. Success may have other far-reaching consequences. Results from the in-depth study of coherences, dephasing and dynamics will eventually impact the fields of quantum computing, optical communication and cryptology, especially if we are successful in demonstrating entangled photons or slow light. An even farther reaching development is if we can show that the QC nanostructure, with its discrete atom-like intersubband resonances, can replace the atom in quantum optics experiments. Having such an 'artificial atom' will greatly improve flexibility and preciseness in experiments, thereby enhancing the discovery of new physics. This is because we will no longer be constrained by what natural can provide. Rather, one will be able to tailor transition energies and optical matrix elements to enhance the physics of interest. This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring optical nonlinearities in intersubband devices. Experimental and theoretical investigations were made to develop a fundamental understanding of light-matter interaction in a semiconductor system and to explore how this understanding can be used to develop mid-IR to THz emitters and nonclassical light sources.
This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring mutual injection locking of composite-cavity lasers for enhanced modulation responses. The program focused on developing a fundamental understanding of the frequency enhancement previously demonstrated for optically injection locked lasers. This was then applied to the development of a theoretical description of strongly coupled laser microsystems. This understanding was validated experimentally with a novel 'photonic lab bench on a chip'.
We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.
Remote optical detection of molecules, agents, and energetic materials has many applications to national security interests. Currently there is significant interest in determining under what circumstances THz frequency coverage will aid in a complete sensing package. Sources of coherent THz frequency (i.e. 0.1 to 10 THz) electromagnetic radiation with requisite power levels, frequency agility, compactness and reliability represent the single greatest obstacle in establishing a THz technology base, but recent advances in semiconductor-based quantum cascade lasers (QCLs) offer huge improvements towards the ultimate THz source goals. This project advanced the development of narrow-linewidth THz quantum cascade lasers. We developed theoretical tools to guide the improvement of standard THz quantum cascade lasers, the investigation of nonlinear optics employing infrared QCLs, and the exploration of quantum coherence to improve QCL performance. The latter was aimed especially towards achieving high temperature operation. In addition we developed a computer algorithm capable of shifting the frequencies of an existing THz QCL to a different frequency and invented a new type of laser that may enable room temperature THz generation in a electrically driven solid-state source.
The emission from a radiating source embedded in a photonic lattice is investigated. The photonic lattice spectrum was found to deviate from the blackbody distribution, with intracavity emission suppressed at certain frequencies and significantly enhanced at others. For rapid population relaxation, where the photonic lattice and blackbody populations are described by the same thermal distribution, it was found that the enhancement does not result in output intensities exceeding those of the blackbody. However, for slow population relaxation, the photonic lattice population has a greater tendency to deviate from thermal equilibrium, resulting in output intensities exceeding those of the blackbody.
A quantum optical approach is proposed and analyzed as a solution to the problem of detecting weak coherent radiation in the presence of a strong incoherent background. The approach is based on the extreme sensitivity of laser dynamical nonlinearities to the coherence of external perturbation. This sensitivity leads to dynamical phase transitions that may be employed for detecting the presence of external coherent radiation. Of particular interest are the transitions between stable and chaotic states of laser operation. Using a baseline scheme consisting of a detector laser operating with a Fabry-Perot cavity, we demonstrated significant qualitative and quantitative differences in the response of the detector laser to the intensity and coherence of the external signal. Bifurcation analysis revealed that considerable modification to the extension of chaotic regions is possible by tailoring active medium and optical resonator configurations. Our calculations showed that with semiconductor lasers, destabilization can occur with a coherent external signal intensity that is over six orders of magnitude smaller than the detector laser's intracavity intensity. Discrimination between coherent and incoherent external signal also looks promising because of the over four orders of magnitude difference in intensity required for inducing chaos-like behavior. These results suggest that the proposed approach may be useful in laser sensor applications, such as satellite Laser Threat Warning Receivers (LTWR).
The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.
This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.
Materials studies of high Al-content (> 30%) AlGaN epilayers and the performance of AlGaN-based LEDs with emission wavelengths shorter than 300 nm are reported. N-type AlGaN films with Al compositions greater than 30% reveal a reduction in conductivity with increasing Al composition. The reduction of threading dislocation density from the 1-5 x10{sup 10} cm{sup -2} range to the 6-9 x 10{sup 9}cm{sup -2} range results in an improvement of electrical conductivity and Al{sub 0.90}Ga{sub 0.10}N films with n= 1.6e17 cm-3 and f{acute Y}=20 cm2/Vs have been achieved. The design, fabrication and packaging of flip-chip bonded deep UV LEDs is described. Large area (1 mm x 1 mm) LED structures with interdigitated contacts demonstrate output powers of 2.25 mW at 297 nm and 1.3 mW at 276 nm when operated under DC current. 300 f{acute Y}m x 300 f{acute Y}m LEDs emitting at 295 nm and operated at 20 mA DC have demonstrated less than 50% drop in output power after more than 2400 hours of operation. Optimization of the electron block layer in 274 nm LED structures has enabled a significant reduction in deep level emission bands, and a peak quantum well to deep level ratio of 700:1 has been achieved for 300 f{acute Y}m x 300 f{acute Y}m LEDs operated at 100 mA DC. Shorter wavelength LED designs are described, and LEDs emitting at 260 nm, 254nm and 237 nm are reported.
This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.
A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters.
This paper investigates nonlinear behavior of coupled lasers. Composite-cavity-mode approach and a class-B description of the active medium are used to describe nonlinearities associated with population dynamics and optical coupling. The multimode equations are studied using bifurcation analysis to identify regions of stable locking, periodic oscillations, and complicated dynamics in the parameter space of coupling-mirror transmission T and normalized cavity-length mismatch dL/{lambda}. We further investigate the evolution of the key bifurcations with the linewidth enhancement factor {alpha}. In particular, our analysis reveals the formation of a gap in the lockband that is gradually occupied by instabilities. We also investigate effects of the cavity-length on chaotic dynamics.
This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.
The synchronization between two coupled lasers was analyzed using a strong-coupling theory. The influences of pump, carrier decay rate, polarization decay rate and coupling mirror losses on synchronization between lasers were investigated using bifurcation analysis, supported by insight provided by analytical solutions. It was found that population pulsation is an essential mode competition mechanism responsible for bistability in the synchronized solutions. The mechanism leading to laser synchronization changes from strong composite-cavity mode competition in class-A regime to frequency locking of composite-cavity modes in class-B regime was discovered.
Proceedings of SPIE - The International Society for Optical Engineering
Schneider, Hans C.; Chow, Weng W.; Smowton, Peter M.; Pèarce, Emma J.; Koch, Stephan W.
We investigate the influence of the coupling between localized and continuum states on the optical gain and refractive index in self-organized quantum-dot structures under high-excitation conditions. For wide-bandgap nitride-based quantum-dot structures we show that the presence of strong many-body Coulomb interactions and the quantum-confined Stark effect result in absorption/gain features that depend on the quantum-dot dimensions in a nontrivial way. For InAs/GaAs based quantum dots, we investigate the refractive index properties and show that negative α. or linewidth enhancement factors may occur in these systems, which makes the beam quality (filamentation) properties of quantum-dot lasers very different from quantum-well lasers. This is consistent with measurements which show a reduction in quantum-dot laser filamentation as the injection level is increased.
IEEE Journal on Selected Topics in Quantum Electronics
Smowton, Peter M.; Lewis, Gareth M.; Blood, Peter; Chow, Weng W.
The authors measure the combined affect of strain and well width on the gain and recombination mechanisms in 635-nm laser structures containing three combinations of tensile strain and well width of 0.5%/10 nm, 0.6%/12.5 nm, and 0.7%/15 nm using the segmented contact method. They find an improvement in the intrinsic properties with increasing strain but the dominant effect in device performance is an extrinsic effect - the overall radiative efficiency, which is found to be less than 30% for all three samples even at 200 K. The authors attribute this to nonradiative recombination within the quantum well. The intrinsic gain-spontaneous current density characteristics of all three samples exhibit similar tangential gain parameters and a decreasing transparency current density from 116 to 87 to 83 Acm-2 with increasing strain and well width. They show that the reduction occurs because of a reduction in the TE polarized spontaneous recombination due to the increased splitting of light and heavy hole subbands. The quasi-Fermi level separation required to achieve a fixed value of gain is insensitive to the particular strain/well width combination. The authors use a microscopic laser theory to model the behavior of a larger range of combinations of tensile strain and well width than were examined experimentally, having first demonstrated that the model correctly describes the experimental gain spectra of the only sample exhibiting appreciable gain in both TM and TE polarizations. The calculated data suggest that using still larger values of strain and well width produces no further benefit in performance.
This paper explores quantum-coherence phenomena in a semiconductor quantum-dot structure. The calculations predict the occurrence of inversionless gain, electromagnetically induced transparency, and refractive-index enhancement in the transient regime for dephasing rates typical under room temperature and high excitation conditions. They also indicate deviations from atomic systems because of strong many-body effects. Specifically, Coulomb interaction involving states of the quantum dots and the continuum belonging to the surrounding quantum well leads to collision-induced population redistribution and many-body energy and field renormalizations that modify the magnitude, spectral shape, and time dependence of quantum-coherence effects.
Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.
Lewis, G.M.; Smowton, P.M.; Blood, P.; Chow, Weng W.
Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes was studied. Polarization sensitive measurements in real units of gain and spontaneous emission of GaInP lasers allowed the isolate the effects. It was found that varying tensile strain and well width for 635 nm operation had no effect on transverse magnetic polarized recombination at fixed gain. It was also found that the total transparency current decreased from 116 to 83 A cm-2 due to increased separation of light and heavy hole bands.
The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.
The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.
We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group-III nitride quantum-well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.
A record high fundamental-mode power of 5.1 mW was achieved from coupled-resonator vertical-cavity lasers (CRVCLs). In conventional VCSELs, the extent to which the gain volume may be increased is limited by the onset of multi-mode operation. Results indicate that this limitation is circumvented in a coupled-resonator device allowing high power fundamental-mode operation.
The authors report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 {micro}W to the electrical power applied to the top cavity. Theoretical analysis suggests that the bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point.
A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limited in size by p-n junctions. High energy, electrically controlled, compact, short-pulse lasers are useful for: active optical sensors (LADAR, range imaging, imaging through clouds, dust, smoke, or turbid water), direct optical ignition of fuels and explosives, optical recording, and micro-machining. The authors present a new class of semiconductor laser that can potentially produce much more short pulse energy than conventional (injection-pumped) semiconductor lasers (CSL) because this new laser is not limited in volume or aspect ratio by the depth of a p-n junction. They have tested current filament semiconductor lasers (CFSL) that have produced 75nJ of 890nm radiation in 1.5ns (50W peak), approximately ten times more energy than ISL. These lasers are created from current filaments in semi-insulating GaAs and, in contrast to CSL, are not based on current injection. Instead, low-field avalanche carrier generation produces a high-density, charge-neutral plasma channel with the required carrier density distribution for lasing. They have observed filaments as long as 3.4cm and several hundred microns in diameter in the high gain GaAs photoconductive switches. Their smallest dimension can be more than 100 times the carrier diffusion length in GaAs. This paper will report spectral narrowing, lasing thresholds, beam divergence, temporal narrowing, and energies which imply lasing for several configurations of CFSL. It will also discuss active volume scaling based on recent high current tests.
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.
The authors have developed electrically-injected coupled-resonator vertical-cavity lasers and have studied their novel properties. These monolithically grown coupled-cavity structures have been fabricated with either one active and one passive cavity or with two active cavities. All devices use a selectively oxidized current aperture in the lower cavity, while a proton implant was used in the active-active structures to confine current in the top active cavity. They have demonstrated optical modulation from active-passive devices where the modulation arises from dynamic changes in the coupling between the active and passive cavities. The laser intensity can be modulated by either forward or reverse biasing the passive cavity. They have also observed Q-switched pulses from active-passive devices with pulses as short as 150 ps. A rate equation approach is used to model the Q-switched operation yielding good agreement between the experimental and theoretical pulseshape. They have designed and demonstrated the operation of active-active devices which la.se simultaneously at both longitudinal cavity resonances. Extremely large bistable regions have also been observed in the light-current curves for active-active coupled resonator devices. This bistability can be used for high contrast switching with contrast ratios as high as 100:1. Coupled-resonator vertical-cavity lasers have shown enhanced mode selectivity which has allowed devices to lase with fundamental-mode output powers as high as 5.2 mW.
The authors report Q-switched operation from an electrically-injected monolithic coupled-resonator structure which consists of an active cavity with InGaAs quantum wells optically coupled to a passive cavity. The passive cavity contains a bulk GaAs region which is reverse-biased to provide variable absorption at the lasing wavelength of 990 nm. Cavity coupling is utilized to effect large changes in output intensity with only very small changes in passive cavity absorption. The device is shown to produce pulses as short as 150 ps at repetition rates as high 4 GHz. A rate equation approach is used to model the Q-switched operation yielding good agreement between the experimental and theoretical pulse shape. Small-signal frequency response measurements also show a transition from a slower ({approximately} 300 MHZ) forward-biased modulation regime to a faster ({approximately} 2 GHz) modulation regime under reverse-bias operation.
In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (<400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). We discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the quantum well system. We compare the performance of two distinct UV LED structures: GaN/AlGaN quantum well LEDs for λ<360 nm emission, and InGaN/AlGaInN quantum well LEDs for 370 nm<λ<390 nm emission.
The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.