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The present document summarizes the experimental efforts of a three-year study funded under the Laboratory Directed Research and Development program of Sandia National Laboratories. The Innovative Diagnostics LDRD project was designed to develop new measurement capabilities to examine the interaction of a propulsive spin jet in a transonic freestream for a model in a wind tunnel. The project motivation was the type of jet/fin interactions commonly occurring during deployment of weapon systems. In particular, the two phenomena of interest were the interaction of the propulsive spin jet with the freestream in the vicinity of the nozzle and the impact of the spin rocket plume and its vortices on the downstream fins. The main thrust of the technical developments was to incorporate small-size, Lagrangian sensors for pressure and roll-rate on a scale model and include data acquisition, transmission, and power circuitry onboard. FY01 was the final year of the three-year LDRD project and the team accomplished much of the project goals including use of micron-scale pressure sensors, an onboard telemetry system for data acquisition and transfer, onboard jet exhaust, and roll-rate measurements. A new wind tunnel model was designed, fabricated, and tested for the program which incorporated the ability to house multiple MEMS-based pressure sensors, interchangeable vehicle fins with pressure instrumentation, an onboard multiple-channel telemetry data package, and a high-pressure jet exhaust simulating a spin rocket motor plume. Experiments were conducted for a variety of MEMS-based pressure sensors to determine performance and sensitivity in order to select pressure transducers for use. The data acquisition and analysis path was most successful by using multiple, 16-channel data processors with telemetry capability to a receiver outside the wind tunnel. The development of the various instrumentation paths led to the fabrication and installation of a new wind tunnel model for baseline non-rotating experiments to validate the durability of the technologies and techniques. The program successfully investigated a wide variety of instrumentation and experimental techniques and ended with basic experiments for a non-rotating model with jet-on with the onboard jets operating and both rotating and non-rotating model conditions.

In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO{sub 2}. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments (C{sub 2}F{sub 6}, CHF{sub 3}, C{sub 4}F{sub 8}), the fluxes of VUV photons to the wafer varied from 1 x 10{sup 15} to 3 x 10{sup 15} photons/cm{sup 2} sec or equivalently from 1.5 to 5 mW/cm{sup 2}. These measurements imply that 0.1% to 0.3% of the rf source power to these discharges ends up hitting the wafer as VUV photons for the typical 20 mT, 200 W rf discharges. For typical ashing discharges containing pure oxygen, the VUV intensities are slightly higher--about 8 mW/cm{sup 2} . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/10/10 mixture of Ar/C{sub 2}F{sub 6}/H{sub 2} yielding VUV fluxes on the wafer 26 mW/cm{sup 2} and pure argon discharges yielding 52 mW/cm{sup 2} . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.