Seebeck Enhancement via Quantum Confinement in MOSFET's: Towards Monolithic On-Chip Cooling
Abstract not provided.
Publications
Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains
IEEE Transactions on Nuclear Science
Abstract not provided.
Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains
Abstract not provided.
Effects of moisture on radiation-induced degradation in CMOS SOI transistors
IEEE Transactions on Nuclear Science
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μSOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (e.g., thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to enhanced radiation-induced degradation. © 2010 IEEE.
High speed (GHZ), ultra-high pressure (GPA) sensor array fabricated in integrated CMOS+MEMS process
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
In order to observe and quantify pressure levels generated during testing of energetic materials, a sensor array with high temporal resolution (∼1 ns) and extremely high pressure range (> 1 GPa) is needed. We have developed such a sensor array which utilizes a novel integrated high performance CMOS+MEMS process. ©2009 IEEE.
Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors
Abstract not provided.
Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors
Proposed for publication in the Conference proceedings from the 31st International Symposium for Testing and Failure Analysis.
Abstract not provided.
Identification of radiation-induced parasitic leakage paths using light emission microscopy
IEEE Transactions on Nuclear Science
Eliminating radiation-induced parasitic leakage paths in integrated circuits (ICs) is key to improving their total dose hardness. Semiconductor manufacturers can use a combination of design and/or process techniques to eliminate known radiation-induced parasitic leakage paths. However, unknown or critical radiation-induced parasitic leakage may still exist on fully processed ICs and it is extremely difficult (if not impossible) to identify these leakage paths based on radiation induced parametric degradation. We show that light emission microscopy can be used to identify the location of radiation-induced parasitic leakage paths in ICs. This is illustrated by using light emission microscopy to find radiation-induced parasitic leakage paths in partially-depleted silicon on insulator static random-access memories (SRAMs). Once leakage paths were identified, modifications were made to the SRAM design to improve the total dose radiation hardness of the SRAMs. Light emission microscopy should prove to be an important tool for the development of future radiation hardened technologies and devices.
Novel application of transmission electron microscopy and scanning capacitance microscopy for defect root cause identification and yield enhancement
Abstract not provided.
9 Results