All-Semiconductor Coupled-Cavity VCSELs for Narrow Linewidth
Conference Digest - IEEE International Semiconductor Laser Conference
We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.