Publications

Conference Digest - IEEE International Semiconductor Laser Conference

Serkland, Darwin K.; Morin, Theodore J.; Grine, Alejandro J.; Peake, Gregory M.; Kendall, Wesley Y.; Wood, Michael G.; Hains, Christopher H.; So, Haley M.; Soudachanh, Amy L.; Geib, Kent M.

We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.

Serkland, Darwin K.; Morin, Theodore J.; Grine, Alejandro J.; Peake, Gregory M.; Kendall, Wesley Y.; Wood, Michael G.; Hains, Christopher H.; So, Haley M.; Soudachanh, Amy L.; Geib, Kent M.

Abstract not provided.