Publications

Synthetic Metals

Steen, William A.; Lloyd, Matthew T.; Guilinger, Terry R.; Voigt, James A.

Abstract not provided.

Guilinger, Terry R.; Gaudioso, Jennifer M.; Aceto, Donato G.; Lowe, Kathleen M.; Tucker, Mark D.; Salerno, Reynolds M.

As George W. Bush recognized in November 2001, "Infectious diseases make no distinctions among people and recognize no borders." By their very nature, infectious diseases of natural or intentional (bioterrorist) origins are capable of threatening regional health systems and economies. The best mechanism for minimizing the spread and impact of infectious disease is rapid disease detection and diagnosis. For rapid diagnosis to occur, infectious substances (IS) must be transported very quickly to appropriate laboratories, sometimes located across the world. Shipment of IS is problematic since many carriers, concerned about leaking packages, refuse to ship this material. The current packaging does not have any ability to neutralize or kill leaking IS. The technology described here was developed by Sandia National Laboratories to provide a fail-safe packaging system for shipment of IS that will increase the likelihood that critical material can be shipped to appropriate laboratories following a bioterrorism event or the outbreak of an infectious disease. This safe and secure packaging method contains a novel decontaminating material that will kill or neutralize any leaking infectious organisms; this feature will decrease the risk associated with shipping IS, making transport more efficient. 3 DRAFT4

Casalnuovo, Stephen A.; Mani, Seethambal S.; Mitchell, Christine C.; Mitchell, Christine C.; Waldrip, Karen E.; Guilinger, Terry R.; Kelley, Michael J.; Fleming, J.G.; Follstaedt, D.M.; Wampler, William R.

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.