A new Wafer-level Packaging Technology for MEMS with Hermetic Micro-environment
Abstract not provided.
Publications
A New Wafer-Level Packaging Technology for MEMS with Hermetic Micro-Environment
Abstract not provided.
Improved manufacturability of AlGaAs/GaAs Pnp heterojunction bipolar transistors
Abstract not provided.
Improved manufacturability of AlGaAs/GaAs Pnp heterojunction bipolar transistors
ECS Transactions
Specially designed Pnp heterojunction bipolar transistors (HBT's) in the AlGaAs/GaAs material system can offer improved radiation response over commercially-available silicon bipolar junction transistors (BJT's). To be a viable alternative to the silicon Pnp BJT, improvements to the manufacturability of the HBT were required. Utilization of a Pd/Ge/Au non-spiking ohmic contact to the base and implementation of a PECVD silicon nitride hard mask for wet etch control were the primary developments that led to a more reliable fabrication process. The implementation of the silicon nitride hard mask and the subsequent process improvements increased the average electrical yield from 43% to 90%. © The Electrochemical Society.
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