Publications

Allemang, Christopher R.; Anderson, Evan M.; Baczewski, Andrew D.; Bussmann, Ezra B.; Butera, Robert E.; Campbell, DeAnna M.; Campbell, Quinn C.; Carr, Stephen M.; Frederick, Esther F.; Gamache, Phillip G.; Gao, Xujiao G.; Grine, Albert D.; Gunter, Mathew M.; Halsey, Connor H.; Ivie, Jeffrey A.; Katzenmeyer, Aaron M.; Leenheer, Andrew J.; Lepkowski, William L.; Lu, Tzu-Ming L.; Mamaluy, Denis M.; Mendez Granado, Juan P.; Pena, Luis F.; Schmucker, Scott W.; Scrymgeour, David S.; Tracy, Lisa A.; Wang, George T.; Ward, Dan W.; Young, Steve M.

While it is likely practically a bad idea to shrink a transistor to the size of an atom, there is no arguing that it would be fantastic to have atomic-scale control over every aspect of a transistor – a kind of crystal ball to understand and evaluate new ideas. This project showed that it was possible to take a niche technique used to place dopants in silicon with atomic precision and apply it broadly to study opportunities and limitations in microelectronics. In addition, it laid the foundation to attaining atomic-scale control in semiconductor manufacturing more broadly.

Arrington, Christian L.; St John, Christopher S.; Pillars, Jamin R.; Carr, Stephen M.; Bland, J.J.B.; Dudley, Ryan L.; Hamel, Michael C.; Schmidt, D.R.S.; Ullom, J.N.U.; Croce, M.P.C.

Abstract not provided.

Arrington, Christian L.; Pillars, Jamin R.; Bland, Jesse J.; Carr, Stephen M.; Lewis, Rupert; Hamel, Michael C.; Schmidt, Dan S.; Ullom, Joel U.; Croce, Mark C.

Abstract not provided.

Arrington, Christian L.; Pillars, Jamin R.; Bland, Jesse J.; Carr, Stephen M.; Lewis, Rupert; Schmidt, Dan S.; Ullom, Joel U.; Croce, Mark C.; Hamel, Michael C.

Abstract not provided.

Ward, Daniel R.; Carr, Stephen M.; Scrymgeour, David S.

Abstract not provided.

Carr, Stephen M.

Abstract not provided.

Pitcher, Natalie A.; Camacho-Lopez, Tara R.; Muller, Richard P.; Patel, Kamlesh P.; Mounce, Andrew M.; Descour, Michael R.; Rinaldi, Steven R.; Kemme, S.A.; Baczewski, Andrew D.; Stick, Daniel L.; Carr, Stephen M.

Abstract not provided.

Applied Physics Letters

Rochette, Sophie R.; Rudolph, Martin R.; Roy, A.-M.R.; Curry, Matthew J.; Ten Eyck, G.A.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.; Ward, Daniel R.; Lilly, M.P.; Carroll, Malcolm

Abstract not provided.

Ward, Daniel R.; Misra, Shashank M.; Carr, Stephen M.

Abstract not provided.

Carroll, Malcolm; Curry, Matthew J.; Mounce, Andrew M.; England, Troy D.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.

Abstract not provided.

Carr, Stephen M.; Ward, Daniel R.; Gamble, John K.; Lu, Tzu-Ming L.; Pluym, Tammy P.; Grine, Albert D.; Anderson, John M.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm; Rochette, Sophie R.; Rudolph, Martin R.; Roy, A.-M.R.; Curry, Matthew J.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.; Ward, Daniel R.; Lilly, Michael L.; Pioro-Ladriere, Michel P.

Abstract not provided.

Carroll, Malcolm; Rochette, Sophie R.; Rudolph, Martin R.; Roy, A.-M.R.; Curry, Matthew J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.; Ward, Daniel R.; Lilly, Michael L.; Pioro-Ladriere, Michel P.

Abstract not provided.

England, Troy D.; Curry, Matthew J.; Carr, Stephen M.; Mounce, Andrew M.; Jock, Ryan M.; Sharma, Peter A.; Bureau-Oxton, Chloe B.; Rudolph, Martin R.; Hardin, Terry H.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm; Curry, Matthew J.; Mounce, Andrew M.; England, Troy D.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.

Abstract not provided.

Misra, Shashank M.; Ward, Daniel R.; Carr, Stephen M.

Abstract not provided.

Curry, Matthew J.; England, Troy D.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Carr, Stephen M.; Carroll, Malcolm

Abstract not provided.

Curry, Matthew J.; England, Troy D.; Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Carr, Stephen M.; Carroll, Malcolm

Abstract not provided.

Curry, Matthew J.; England, Troy D.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Carr, Stephen M.; Carroll, Malcolm

Abstract not provided.

Scrymgeour, David S.; Simonson, Robert J.; Marshall, Michael T.; Misra, Shashank M.; Ward, Daniel R.; Carr, Stephen M.; Bielejec, Edward S.; Bussmann, Ezra B.; Carroll, Malcolm

Abstract not provided.

England, Troy D.; Lilly, Michael L.; Curry, Matthew J.; Carr, Stephen M.; Carroll, Malcolm

Abstract not provided.

Gamble, John K.; Jacobson, Noah T.; Muller, Richard P.; Nielsen, Erik N.; Carr, Stephen M.; Carroll, Malcolm; Curry, Matthew J.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Rudolph, Martin R.

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Applied Physics Letters

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Bishop, N.C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Lilly, M.P.; Carroll, Malcolm

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ∼9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ∼ 2.7 × 10 3, the power dissipation of the amplifier is 13 μW, the bandwidth is ∼ 1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/ Hz. With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.