Room Temperature In-plane ?100? Magnetic Easy Axis for Fe3O4/SrTiO3(001):Nb Grown by Infrared PLD
Applied Physics Letters
Abstract not provided.
Publications
Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
Proposed for publication in Physical Review B.
Abstract not provided.
Graphene/Au(111) interaction studied by scanning tunneling microscopy
Proposed for publication in Physical Review B.
Abstract not provided.
Epitaxial graphene on Au (111): a platform for quasi-single crystalline monolayer films
Nature Materials
Abstract not provided.
Growth from below: graphene multilayers on Ir(111)
ACS Nano
Abstract not provided.
Graphene islands on Cu foils: The interplay between shape, orientation, and defects
Nano Letters
We have observed the growth of monolayer graphene on Cu foils using low-energy electron microscopy. On the (100)-textured surface of the foils, four-lobed, 4-fold-symmetric islands nucleate and grow. The graphene in each of the four lobes has a different crystallographic alignment with respect to the underlying Cu substrate. These "polycrystalline" islands arise from complex heterogeneous nucleation events at surface imperfections. The shape evolution of the lobes is well explained by an angularly dependent growth velocity. Well-ordered graphene forms only above ∼790 °C. Sublimation-induced motion of Cu steps during growth at this temperature creates a rough surface, where large Cu mounds form under the graphene islands. Strategies for improving the quality of monolayer graphene grown on Cu foils must address these fundamental defect-generating processes. © 2010 American Chemical Society.
In-plane orientation effects on the electronic structure stability and Raman scattering of monolayer graphene on Ir(111)
Physical Review B
Abstract not provided.
Roles of carbon diffusion and step structure on the growth of graphene on SiC(0001)
Abstract not provided.
Roles of carbon diffusion and step structure on the growth of graphene on SiC(0001)
Abstract not provided.
Roles of carbon diffusion and step structure on the growth of graphene on SiC(0001)
Abstract not provided.
Pentagons and heptagons in the first water layer on Pt(111)
Physical Review Letters
Abstract not provided.
The role of carbon surface diffusion on the growth of epitaxial graphene on SiC
Abstract not provided.
The role of carbon surface diffusion on the growth of epitaxial graphene on SiC
Growth of high quality graphene films on SiC is regarded as one of the more viable pathways toward graphene-based electronics. Graphitic films form on SiC at elevated temperature because of preferential sublimation of Si. Little is known, however, about the atomistic processes of interrelated SiC decomposition and graphene growth. We have observed the formation of graphene on SiC by Si sublimation in an Ar atmosphere using low energy electron microscopy, scanning tunneling microcopy and atomic force microscopy. This work reveals that the growth mechanism depends strongly on the initial surface morphology, and that carbon diffusion governs the spatial relationship between SiC decomposition and graphene growth. Isolated bilayer SiC steps generate narrow ribbons of graphene, whereas triple bilayer steps allow large graphene sheets to grow by step flow. We demonstrate how graphene quality can be improved by controlling the initial surface morphology specifically by avoiding the instabilities inherent in diffusion-limited growth.
Interpretation of high-resolution images of the best-bound wetting layers on Pt(111)
Journal of Chemical Physics
Abstract not provided.
14 Results