Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells
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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells
2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017
The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.
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