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Characterization of Switching Filament Formation in TaOx Memristive Memory Films

Marinella, Matthew J.; Marinella, Matthew J.; Howell, Stephen W.; Howell, Stephen W.; Decker, Seth D.; Decker, Seth D.; Hughart, David R.; Hughart, David R.; Lohn, Andrew L.; Lohn, Andrew L.; Mickel, Patrick R.; Mickel, Patrick R.; Apodaca, Roger A.; Apodaca, Roger A.; Bielejec, Edward S.; Bielejec, Edward S.; Beechem, Thomas E.; Beechem, Thomas E.; Wolfley, Steven L.; Wolfley, Steven L.; Stevens, James E.; Brennecka, Geoffrey L.

Abstract not provided.

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TYPE Presentation YEAR 2014
OSTI

Development characterization and modeling of a TaOx ReRAM for a neuromorphic accelerator

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

This report discusses aspects of neuromorphic computing and how it is used to model microsystems.

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TYPE Conference Poster YEAR 2014
OSTIDOI

Onset of dielectric breakdown in LPCVD silicon oxynitride thin films

Proceedings - Electrochemical Society

Habermehl, Scott D.; Apodaca, Roger A.

Charge transport and dielectric breakdown is studied in silicon oxynitride films with optical index of refraction varying from 1.77 to 2.01, and thickness ranging from 20 to 50 nm. Assuming Poole-Frenkel emission as the dominant charge transport mechanism, a compositionally dependent ionization potential ranging from 1.22 to 1.51 eV is observed. Over the same composition range, the barrier lowering energy at the point of dielectric breakdown is independently determined to vary between 1.24 and 1.56 eV. The correlation between these energies suggests a causal relationship between field saturation-induced trap ionization and dielectric breakdown. It is concluded that in the vicinity of the field saturation point a diminished capacity for regulating hot electron injection via the action of charge trapping results in an increased probability for impact ionization and subsequent dielectric breakdown.

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TYPE Conference YEAR 2005
ScopusOSTI

Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films

Proposed for publication in Applied Physics Letters.

Habermehl, Scott D.; Apodaca, Roger A.

Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN{sub 1.33} to SiN{sub 0.54}, the Poole-Frenkel trap depth ({Phi}{sub B}) decreases from 1.08 to 0.52 eV as the intrinsic film strain ({Epsilon}{sub i}) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN{sub 1.33} to SiO{sub 1.49}N{sub 0.35}, {Phi}{sub B} increases from 1.08 to 1.53 eV as {Epsilon}{sub i} decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between {Phi}{sub B} and {Epsilon}{sub i}. Compositionally induced strain relief as a mechanism for regulating {Phi}{sub B} is discussed.

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TYPE Journal Article YEAR 2003
OSTI
11 Results
11 Results