Publications

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The ability to authenticate the source and integrity of data is critical to the monitoring and inspection of special nuclear materials, including hardware related to weapons production. Current methods rely on electronic encryption/authentication codes housed in monitoring devices. This always invites the question of implementation and protection of authentication information in an electronic component necessitating EMI shielding, possibly an on board power source to maintain the information in memory. By using atomic layer deposition techniques (ALD) on photonic band gap (PBG) optical fibers we will explore the potential to randomly manipulate the output spectrum and intensity of an input light source. This randomization could produce unique signatures authenticating devices with the potential to authenticate data. An external light source projected through the fiber with a spectrometer at the exit would 'read' the unique signature. No internal power or computational resources would be required.

We report low-temperature transport measurements of a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). In contrast to previously reported measurements of DQD's in Si MOS structures, our device has a lateral gate geometry very similar to that used by Petta et al. to demonstrate coherent manipulation of single electron spins. This gate design provides a high degree of tunability, allowing for independent control over individual dot occupation and tunnel barriers, as well as the ability to use nearby constrictions to sense dot charge occupation. Comparison of experimentally extracted capacitances between the dot and nearby gates with electrostatic modeling demonstrates the presence of disorder and the ability to partially compensate for this disorder by adjustment of gate voltages. We experimentally show gate-controlled tuning of the interdot coupling over a wide range of energies, an important step towards potential quantum computing applications.

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

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Thin and small form factor cells have been researched lately by several research groups around the world due to possible lower assembly costs and reduced material consumption with higher efficiencies. Given the popularity of these devices, it is important to have detailed information about the behavior of these devices. Simulation of fabrication processes and device performance reveals some of the advantages and behavior of solar cells that are thin and small. Three main effects were studied: the effect of surface recombination on the optimum thickness, efficiency, and current density, the effect of contact distance on the efficiency for thin cells, and lastly the effect of surface recombination on the grams per Watt-peak. Results show that high efficiency can be obtained in thin devices if they are well-passivated and the distance between contacts is short. Furthermore, the ratio of grams per Watt-peak is greatly reduced as the device is thinned.

Phase transformation between the ferroelectric (FE) and the antiferroelectric (AFE) phases in tin modified lead zirconate titanate (PSZT) ceramics can be influenced by pressure and electric field. Increasing the pressure has the tendency to favor the AFE phase while electric field favors the FE phase. In this study, these phase transformations are studied as functions of external pressure, temperature, and dc bias. The shifting of transformation temperature and the relative phase stability between FE and AFE with respect to these external parameters will be presented. Results will be compared to a pressure-induced depoling behavior (or FE-to-AFE phase transformation) for the PSZT ceramic. Fundamental issues relates to the relative phase stability will be discussed from the perspective of lattice dynamics theory.

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The combination of Proximity-field nanoPatterning (PnP) and graded temperature ALD has enabled the synthesis of robust three dimensional nanostructures. The PnP process uses a simple elastomeric optical phase mask to generate a complex three dimensional interference pattern in photopolymer 1. Once the photopolymer structure has been obtained, it is subsequently used as a template for graded temperature ALD. The graded temperature ALD chemistry is used to coat and lock-in the designed nanostructure without melting the template. This process generates a thermally robust nanostructure for further, higher temperature, ALD surface treatments. The ALD chemistry is performed at various (increasing) temperatures to secure the nanostructure and to reduce the macroscopic stress of the structure as higher temperature depositions are performed. Three methods for nanostructure characterization have been useful in interrogating these structures: quartz crystal microbalance (QCM), optical interference, and focused ion beam scanning electron microscopy (FIB-SEM). This paper will cover the fabrication process for generating PnP nanostructures. Details of the graded temperature ALD chemical process for AI2O3 will be covered. Also, structural characterizations using SEM and optical interference will be used to quantify the degree of deposition and the thermal stability of these interesting structures. © The Electrochemical Society.

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Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

Detailed studies of the properties of ceramic CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) have clarified the physics of this interesting material and revealed several features not reported before. The dielectric relaxational properties of CCTO are explained in terms of a capacitive-layer model, as for an inhomogeneous semiconductor, consisting of semiconducting grains and insulating grain boundaries as also concluded by others. The kinetics of the main [low-temperature (T)] relaxation reveal that two different thermally activated processes in CCTO grains control the dynamics. A likely candidate defect responsible for the two processes is the oxygen vacancy which is a double donor. A higher-T relaxation is determined by grain boundary conduction. Both Nb and Fe doping lowered both the apparent dielectric constant {var_epsilon}{prime} and the dielectric loss, but increased Fe doping led to more dramatic effects. At 3 at.% Fe doping, the anomalous {var_epsilon}{prime}(T) response was removed, making the CCTO an intrinsic, very-low-loss dielectric. The intrinsic {var_epsilon}{prime}({approx}75) and its T dependence are measured and shown to be largely determined by a low-lying soft TO phonon. At low T, cubic CCTO transforms into an antiferromagnetic phase at T{sub N} = 25 K. T{sub N} is essentially independent of Nb doping (up to 4 at.%) and of hydrostatic pressure (up to {approx}7 kbar), but decreases significantly with Fe doping. Analysis of the high-T dependence of the magnetic susceptibility provided insight into the role of Fe as a dopant. Finally, an {var_epsilon}{prime}(T) anomaly associated with the onset of antiferromagnetic order has been discovered, providing evidence for coupling between the polarization and sublattice magnetization. The possible origin of this coupling is discussed.

The influences of hydrostatic pressure and biasing electric field on the dielectric properties and phase behavior of a single crystal of the perovskite compound Pb(Sc{sub 0.5}Nb{sub 0.5})O{sub 3}, (PSN) have been investigated. On cooling from high temperatures, the crystal first enters a relaxor (R) state and then spontaneously transforms to a ferroelectric (FE) phase at a temperature, T{sub c}, substantially below the peak temperature, T{sub m}, in the dielectric susceptibility. Based on earlier work on ceramic samples, this behavior suggests substantial chemical (Sc and Nb) disorder at the B sites. Pressure enhances the R state with strong indications that the FE phase should vanish at a pressure somewhat higher than the highest pressure reached in the experiments, making the R state the ground state of the crystal at reduced volume. A significant feature of the temperature (T)-pressure (P) phase diagram is the finding that the T{sub c}(P) phase line should terminate at a pressure between 10 and 15 kbar in a manner akin to a critical point; however, in the case of PSN this feature represents a FE-to-R crossover. Such behavior suggests that a path can be defined that takes the crystal from the FE phase to the R state without crossing a phase boundary. A biasing electric field favors the FE phase over the R state, and the results indicate that the R state vanishes at 5 kV/cm. The magnitudes of both the high T Curie-Weiss constant, C, and the change in entropy (or latent heat) at T{sub c} are found to be comparable to those of simple displacive perovskite oxides such as BaTiO{sub 3} and PbTiO{sub 3}.

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