A unique, micro-scale architecture is proposed to create a novel hybrid concentrated photovoltaic system. Micro-scale (sub-millimeter wide), multi-junction cells are attached to a large-area silicon cell backplane (several inches wide) that can optimally collect both direct and diffuse light. By using multi- junction III-V cells, we can get the highest possible efficiency of the direct light input. In addition, by collecting the diffuse light in the large-area silicon cell, we can produce power on cloudy days when the concentrating cells would have minimal output. Through the use of micro-scale cells and lenses, the overall assembly will provide higher efficiency than conventional concentrators and flat plates, while keeping the form factor of a flat plate module. This report describes the hybrid concept, the design of a prototype, including the PV cells and optics, and the experimental results.
The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.
The thermal interdiffusion of AlSb/GaSb multiquantum wells was measured and the intrinsic diffusivities of Al and Ga determined over a temperature range of 823-948 K for 30-9000 s. The 77-K photoluminescence (PL) was used to monitor the extent of interdiffusion through the shifts in the superlattice luminescence peaks. The chemical diffusion coefficient was quantitatively determined by fitting the observed PL peak shifts to the solution of the Schroedinger equation, using a potential derived from the solution of the diffusion equation. The value of the interdiffusion coefficient ranged from 5.2 x 10{sup -4} to 0.06 nm{sup 2}/s over the conditions studied and was characterized by an activation energy of 3.0 {+-} 0.1 eV. The intrinsic diffusion coefficients for Al and Ga were also determined with higher values for Al than for Ga, described by activation energies of 2.8 {+-} 0.4 and 1.1 {+-} 0.1 eV, respectively.
This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.
We have investigated InAs quantum dots (QD) formed on GaAs(1 0 0) using metal-organic chemical vapor deposition. Through a combination of room temperature photoluminescence and atomic force microscopy we have characterized the quantum dots. We have determined the effect of growth rate, deposited thickness, hydride partial pressure, and temperature on QD energy levels. The window of thickness for QD formation is very small, about 3 {angstrom} of InAs. By decreasing the growth rate used to deposit InAs, the ground state transition of the QD is shifted to lower energies. The formation of optically active InAs QD is very sensitive to temperature. Temperatures above 500 C do not form optically active QDs. The thickness window for QD formation increases slightly at 480 C. This is attributed to the thermal dependence of diffusion length. The AsH{sub 3} partial pressure has a non-linear effect on the QD ground state energy.
n-type GaSb has been prepared by metal-organic chemical vapour deposition with tellurium donors using diethyltelluride as the dopant precursor. The maximum carrier concentration achieved was 1.7 x 10{sup 18} cm{sup -3}, as measured by van der Pauw-Hall effect measurements, for an atomic tellurium concentration of 1.8 x 10{sup 19} cm{sup -3}. The apparent low activation of tellurium donors is explained by a model that considers the effect of electrons occupying both the {Lambda} and L bands in GaSb due to the small energy difference between the {Lambda} and L conduction band minima. The model also accounts for the apparent increase in the carrier concentration determined by van der Pauw-Hall effect measurements at cryogenic temperatures.
Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.
We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approximately} 0.55 {micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron nobilities of {approximately}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1{minus}x}Al{sub x}Sb buffers for compositions x{le}0.22 and have found that the best results are obtained near x=0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch.
Nanometer-scale compositional structure in InAsxP1.InNYAsxPl.x-Y/InP, grown by gas-source molecular-beam epitaxy and in InAsl-xPJkAsl$b#InAs heterostructures heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP1-x alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (T 11) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP1-x-Y alloy layers. Imaging of InAsl-xp@Asl#bY superlattices reveals nanometer-scale clustering within both the hAsI-.p and InAsl$bY alloy layers, with preferential alignment of compositional features in the direction. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.
The engineering of advanced semiconductor heterostructure materials and devices requires a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy has emerged as a unique and powerful method to characterize structural morphology and electronic properties in semiconductor epitaxial layers and device structures at these length scales. The basic experimental techniques in cross-sectional scanning tunneling microscopy are described, and some representative applications to semiconductor heterostructure characterization drawn from recent investigations in the authors laboratory are discussed. Specifically, they describe some recent studies of InP/InAsP and InAsP/InAsSb heterostructures in which nanoscale compositional clustering has been observed and analyzed.
We have grown AlSb and AlAsxSb1 - x epitaxial layers by metal-organic chemical vapor deposition (MOCVD) using trimethylamine alane or ethyldimethylamine alane, triethylantimony, and arsine. These layers were successfully doped p-or n-type using diethylzinc or tetraethyltin, respectively. We examined the growth of AlAsxSb1 - x using temperatures of 500-600°C, pressures of 65-630 Torr, V/III ratios of 1-17, and growth rates of 0.3-2.7 μm/h in a horizontal quartz reactor. We have also fabricated gain-guided, injection lasers using AlAsxSb1 - x for optical confinement and a strained InAsSb/InAs multi-quantum well active region grown using MOCVD. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8-3.9 μm.
We describe the metal-organic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH3, and PH3. By changing the layer thickness and composition we have prepared structures with low temperature (les/20 K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW.
AlSb and AlAs{sub x}Sb{sub 1{minus}x} epitaxial films grown by metal-organic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 C and 76 torr using trimethylamine or ethyldimethylamine alane and triethylantimony. The authors examined the growth of AlAsSb using temperature of 500 to 600 C, pressures of 65 to 630 torr, V/III ratios of 1--17, and growth rates of 0.3 to 2.7 {micro}m/hour in a horizontal quartz reactor. SIMS showed C and O levels below 2 {times} 10{sup 18} cm{sup {minus}3} and 6 {times} 10{sup 18} cm{sup {minus}3} respectively for undoped AlSb. Similar levels of O were found in AlAs{sub 0.16}Sb{sub 0.84} films but C levels were an order of magnitude less in undoped and Sn-doped AlAs{sub 0.16}Sb{sub 0.84} films. Hall measurements of AlAs{sub 0.16}Sb{sub 0.84} showed hole concentrations between 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3} for Zn-doped material and electron concentrations in the low to mid 10{sup 18} cm{sup {minus}3} for Sn-doped material. They have grown pseudomorphic InAs/InAsSb quantum well active regions on AlAsSb cladding layers. Photoluminescence of these layers has been observed up to 300 K.
Alternate organometallic Sb sources are being investigated to improve the characteristics of InSb grown by MOCVD. InSb grown using trimethylindium (TMIn) and trimethylantimony (TMSb) or triethylantimony (TESb) yielded similar quality materials under similar growth conditions. InSb grown using triethylindium (TEIn) and TESB under similar growth conditions yielded very poor quality n-type material. Three new organometallic Sb sources, triisopropyl-antimony (TIPSb), tris(dimethylamino)antimony (TDMASb), and tertiarybutyldimethylantimony (TBDMSb) are being investigated. Growth of InSb using TIPSb, TDMASb, or TBDMSb and TMIn was investigated over 350 to 475{degrees}C. InSb grown from TDMASb had similar properties to InSb grown from TMIn and TMSb when using a similar temperature and V/III ratio range. Growth rates of InSb using TMIn and either TIPSb or TBDMSb at temperatures {le} 425{degrees}C were proportional to both TMIn flow rate and temperature. Surface morphology of InSb grown using either TIPSb or TBDMSb was rough for growth temperatures {le} 425{degrees}C; this may be due to complex decomposition and methyl groups on surface. The InSb with the highest mobility was grown at 400{degrees}C and a V/III ratio of 3 using TIPSb. It was n-type with a carrier concentration of 2.5 {times} 10{sup 15} cm{sup {minus}3} and a mobility of 78,160 cm{sup 2}/Vs at 77 K. Both n- and p-type InSb were grown using TBDMSb with mobilities up to 67,530 and 7773 cm{sup 2}/Vs, respectively at 77 K. Mobility for InSb using either TIPSb or TBDMSb was optimized by going to lower temperatures, pressures, V/III ratios; however, surface morphology improved with higher temperature, pressure, V/III ratio. High mobility InSb with smooth surfaces at T {le} 425{degrees}C was not obtained with TIPSb or TBDMSb and TMIn.
Dislocation formation in InAs{sub 1-x}Sb{sub x} buffer layers grown by metal-organic chemical vapor deposition is shown to be reproducibly enhanced by p-type doping at levels greater than or equal to the intrinsic carrier concentration at the growth temperature. To achieve a carrier concentration greater than 2 {times} 10{sup 18} cm{sup {minus}3}, the intrinsic carrier concentration of InSb at 475 C, p-type doping with diethylzinc was used. Carrier concentrations up to 6 {times} 10{sup 18} cm{sup {minus}3} were obtained. The zinc doped buffer layers have proven to be reproducibly crack free for InAs{sub 1-x}Sb{sub x} step graded buffer layers with a final composition of x = 0.12 and a strained layer superlattice with an average composition of x = 0.09. These buffer layers have been used to prepare SLS infrared photodiodes. The details of the buffer layer growth, an explanation for the observed Fermi level effect and the growth and characterization of an infrared photodiode are discussed.
Infrared absorption and photoluminescence have been demonstrated for InAs{sub 1-x}Sb{sub x}/InSb strained-layer superlattices (SLS's) in the 8--15 {eta}m region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an in-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8 {times} 10{sup 15} to 5 {times} 10{sup 18} cm{sup {minus}3} and mobilities of 6.7 {times} 10{sup 4} to 1.1 {times} 10{sup 4} cm{sup 2}/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible. 5 refs., 4 figs.
