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SOI-Enabled MEMS Processes Lead to Novel Mechanical Optical and Atomic Physics Devices Presentation

Herrera, Gilbert V.; McCormick, Frederick B.; Nielson, Gregory N.; Nordquist, Christopher N.; Okandan, Murat O.; Olsson, Roy H.; Ortiz, Keith O.; Platzbecker, Mark R.; Resnick, Paul J.; Shul, Randy J.; Bauer, Todd B.; Sullivan, Charles T.; Watts, Michael W.; Blain, Matthew G.; Dodd, Paul E.; Dondero, Richard D.; Garcia, Ernest J.; Galambos, Paul; Hetherington, Dale L.; Hudgens, James J.

Abstract not provided.

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TYPE Conference YEAR 2008
OSTI

SOI-Enabled MEMS Processes Lead to Novel Mechanical Optical and Atomic Physics Devices

Herrera, Gilbert V.; McCormick, Frederick B.; Nielson, Gregory N.; Nordquist, Christopher N.; Okandan, Murat O.; Olsson, Roy H.; Ortiz, Keith O.; Platzbecker, Mark R.; Resnick, Paul J.; Shul, Randy J.; Bauer, Todd B.; Sullivan, Charles T.; Watts, Michael W.; Blain, Matthew G.; Dodd, Paul E.; Dondero, Richard D.; Garcia, Ernest J.; Galambos, Paul; Hetherington, Dale L.; Hudgens, James J.

Abstract not provided.

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TYPE Conference YEAR 2008
OSTI

Arsenic ion implant energy effects on CMOS gate oxide hardness

Proposed for publication in the IEEE Transactions on Nuclear Science.

Draper, Bruce L.; Shaneyfelt, Marty R.; Young, Ralph W.; Headley, Thomas J.; Dondero, Richard D.

Under conditions that were predicted as 'safe' by well-established TCAD packages, radiation hardness can still be significantly degraded by a few lucky arsenic ions reaching the gate oxide during self-aligned CMOS source/drain ion implantation. The most likely explanation is that both oxide traps and interface traps are created when ions penetrate and damage the gate oxide after channeling or traveling along polysilicon grain boundaries during the implantation process.

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TYPE Journal Article YEAR 2005
OSTI
6 Results
6 Results