Publications

IEEE Transactions on Nuclear Science

Dodd, Paul E.; Shaneyfelt, Marty R.; Walsh, David S.; Schwank, James R.; Hash, Gerald L.; Jones, Rhonda L.; Draper, Bruce L.; Winokur, Peter S.

The characteristics Of ion-induced charge collection and single-event upset are studied in SOI transistors and circuits with various body tie structures. Impact ionization effects including single-event snapback are shown to be very important. Focused ion microbeam experiments are used to find single-event snapback drain voltage thresholds in n-channel SOI transistors as a function of device width. Three-Dimensional device simulations are used to determine single-event upset and snapback thresholds in SOI SRAMS, and to study design tradeoffs for various body-tie structures. A window of vulnerability to single-event snapback is shown to exist below the single-event upset threshold. The presence of single-event snapback in commercial SOI SRAMS is confirmed through broadbeam ion testing, and implications for hardness assurance testing of SOI integrated circuits are discussed.

IEEE Transactions on Nuclear Science

Schwank, James R.; Witczak, Steven C.; Riewe, Leonard C.; Shaneyfelt, Marty R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Jones, Rhonda L.; Draper, Bruce L.

Abstract not provided.

Schwank, James R.; Shaneyfelt, Marty R.; Jones, Rhonda L.; Draper, Bruce L.; Dodd, Paul E.; Witczak, Steven C.; Riewe, Leonard C.

Large differences in charge buildup in SOI buried oxides can result between x-ray and Co-60 irradiations. The effects of bias configuration and substrate type on charge buildup and hardness assurance issues are explored.