This report summarizes design and modeling activities for the MEMS passive shock sensor. It provides a description of past design revisions, including the purposes and major differences between design revisions but with a focus on Revisions 4 through 7 and the work performed in fiscal year 2008 (FY08). This report is a reference for comparing different designs; it summarizes design parameters and analysis results, and identifies test structures. It also highlights some of the changes and or additions to models previously documented [Mitchell et al. 2006, Mitchell et al. 2008] such as the way uncertainty thresholds are analyzed and reported. It also includes dynamic simulation results used to investigate how positioning of hard stops may reduce vibration sensitivity.
This report summarizes the functional, model validation, and technology readiness testing of the Sandia MEMS Passive Shock Sensor in FY08. Functional testing of a large number of revision 4 parts showed robust and consistent performance. Model validation testing helped tune the models to match data well and identified several areas for future investigation related to high frequency sensitivity and thermal effects. Finally, technology readiness testing demonstrated the integrated elements of the sensor under realistic environments.
This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.
A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.