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Single-mode GaN nanowire lasers

Optics Express

Li, Qiming L.; Wright, Jeremy B.; Chow, Weng W.; Luk, Ting S.; Brener, Igal B.; Lester, Luke F.; Wang, George T.

We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.

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TYPE Journal Article YEAR 2012
ScopusOSTIDOI

Top-down fabrication of GaN-based nanorod LEDs and lasers

Proceedings of SPIE - The International Society for Optical Engineering

Wang, George T.; Li, Qiming L.; Wierer, Jonathan W.; Figiel, J.J.; Wright, Jeremy B.; Luk, Ting S.; Brener, Igal B.

Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

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TYPE Conference YEAR 2012
ScopusOSTI

In situ nanomechanics of GaN nanowires

Nano Letters

Huang, Jian Y.; Zheng, He; Mao, S.X.; Li, Qiming L.; Wang, George T.

The deformation, fracture mechanisms, and the fracture strength of individual GaN nanowires were measured in real time using a transmission electron microscope-scanning probe microscope (TEM-SPM) platform. Surface mediated plasticity, such as dislocation nucleation from a free surface and plastic deformation between the SPM probe (the punch) and the nanowire contact surface were observed in situ. Although local plasticity was observed frequently, global plasticity was not observed, indicating the overall brittle nature of this material. Dislocation nucleation and propagation is a precursor before the fracture event, but the fracture surface shows brittle characteristic. The fracture surface is not straight but kinked at (10-10) or (10-11) planes. Dislocations are generated at a stress near the fracture strength of the nanowire, which ranges from 0.21 to 1.76 GPa. The results assess the mechanical properties of GaN nanowires and may provide important insight into the design of GaN nanowire devices for electronic and optoelectronic applications. © 2011 American Chemical Society.

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TYPE Journal Article YEAR 2011
ScopusOSTIDOI

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Optics Express

Li, Qiming L.; Crawford, Mary H.; Koleske, Daniel K.; Figiel, J.J.; Cross, Karen C.; Wang, George T.

Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.

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TYPE Journal Article YEAR 2011
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III-nitride nanowires : novel materials for solid-state lighting

Wang, George T.; Li, Qiming L.; Huang, Jian Y.; Armstrong, Andrew A.

Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.

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TYPE Conference YEAR 2010
OSTI

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires

Armstrong, Andrew A.; Bogart, Katherine B.; Li, Qiming L.; Wang, George T.; Jones, Reese E.; Zhou, Xiaowang Z.; Huang, Jian Y.; Harris, Charles T.; Siegal, Michael P.; Shaner, Eric A.

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

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TYPE SAND Report YEAR 2010
OSTIDOI

III-nitride nanowires : growth, properties, and applications

Wang, George T.; Li, Qiming L.; Huang, Jian Y.; Armstrong, Andrew A.

Nanowires based on the III nitride materials system have attracted attention as potential nanoscale building blocks in optoelectronics, sensing, and electronics. However, before such applications can be realized, several challenges exist in the areas of controlled and ordered nanowire synthesis, fabrication of advanced nanowire heterostructures, and understanding and controlling the nanowire electrical and optical properties. Here, recent work is presented involving the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using advanced electrical, optical and structural characterization techniques.

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TYPE Conference YEAR 2010
OSTI

Final LDRD report : enhanced spontaneous emission rate in visible III-nitride LEDs using 3D photonic crystal cavities

Fischer, Arthur J.; Subramania, Ganapathi S.; Lee, Yun-Ju L.; Koleske, Daniel K.; Li, Qiming L.; Wang, George T.; Luk, Ting S.; Fullmer, Kristine W.

The fundamental spontaneous emission rate for a photon source can be modified by placing the emitter inside a periodic dielectric structure allowing the emission to be dramatically enhanced or suppressed depending on the intended application. We have investigated the relatively unexplored realm of interaction between semiconductor emitters and three dimensional photonic crystals in the visible spectrum. Although this interaction has been investigated at longer wavelengths, very little work has been done in the visible spectrum. During the course of this LDRD, we have fabricated TiO{sub 2} logpile photonic crystal structures with the shortest wavelength band gap ever demonstrated. A variety of different emitters with emission between 365 nm and 700 nm were incorporated into photonic crystal structures. Time-integrated and time-resolved photoluminescence measurements were performed to measure changes to the spontaneous emission rate. Both enhanced and suppressed emission were demonstrated and attributed to changes to the photonic density of states.

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TYPE SAND Report YEAR 2009
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Low dislocation GaN via defect-filtering, self-assembled SiO2-sphere layers

Wang, George T.; Li, Qiming L.

The III-nitride (AlGaInN) materials system forms the foundation for white solid-state lighting, the adoption of which could significantly reduce U.S. energy needs. While the growth of GaN-based devices relies on heteroepitaxy on foreign substrates, the heteroepitaxial layers possess a high density of dislocations due to poor lattice and thermal expansion match. These high dislocation densities have been correlated with reduced internal quantum efficiency and lifetimes for GaN-based LEDs. Here, we demonstrate an inexpensive method for dislocation reduction in GaN grown on sapphire and silicon substrates. This technique, which requires no lithographic patterning, GaN is selectively grown through self-assembled layers of silica microspheres which act to filter out dislocations. Using this method, the threading dislocation density for GaN on sapphire was reduced from 3.3 x 10{sup 9} cm{sup -2} to 4.0 x 10{sup 7} cm{sup -2}, and from the 10{sup 10} cm{sup -2} range to {approx}6.0 x 10{sup 7} cm{sup -2} for GaN on Si(111). This large reduction in dislocation density is attributed to a dislocation blocking and bending by the unique interface between GaN and silica microspheres.

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TYPE SAND Report YEAR 2009
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Final LDRD report : the physics of 1D and 2D electron gases in III-nitride heterostructure NWs

Wang, George T.; Armstrong, Andrew A.; Li, Qiming L.; Lin, Yong L.

The proposed work seeks to demonstrate and understand new phenomena in novel, freestanding III-nitride core-shell nanowires, including 1D and 2D electron gas formation and properties, and to investigate the role of surfaces and heterointerfaces on the transport and optical properties of nanowires, using a combined experimental and theoretical approach. Obtaining an understanding of these phenomena will be a critical step that will allow development of novel, ultrafast and ultraefficient nanowire-based electronic and photonic devices.

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TYPE SAND Report YEAR 2009
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73 Results
73 Results