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Single-mode GaN nanowire lasers

Optics Express

Li, Qiming L.; Wright, Jeremy B.; Chow, Weng W.; Luk, Ting S.; Brener, Igal B.; Lester, Luke F.; Wang, George T.

We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.

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TYPE Journal Article YEAR 2012
ScopusOSTIDOI

Top-down fabrication of GaN-based nanorod LEDs and lasers

Proceedings of SPIE - The International Society for Optical Engineering

Wang, George T.; Li, Qiming L.; Wierer, Jonathan W.; Figiel, J.J.; Wright, Jeremy B.; Luk, Ting S.; Brener, Igal B.

Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

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TYPE Conference YEAR 2012
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Results 1–25 of 73
Results 1–25 of 73