Publications

Toroidal dielectric metasurface with a Q-factor of 728 in 1500 nm wavelength are reported. The resonance couples strongly to the environment, as demonstrated with a refractometric sensing experiment.

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Saturable optical elements lie at the cornerstone of many modern optical systems. Regularly patterned quasi-planar nanostructures - metasurfaces - are known to facilitate nonlinear optical processes. Such subwavelength semiconductor nanostructures can potentially serve as saturable components. Here we report on the intensity-dependent reflectance of femtosecond laser pulses from semiconductor metasurfaces with Mie-type modes, caused by the absorption saturation. Arrays of GaAs nanocylinders with magnetic dipole resonances in the spectral vicinity of the GaAs bandgap demonstrate a reduced saturation intensity and increased self-modulation efficiency, an order of magnitude higher than bulk GaAs or unstructured GaAs films. By contrast, the reflection modulation is shown to be negligible in the CW regime for the same average intensities, indicating that the process is not the result of temperature effects. Our work provides a novel idea for low-power saturable elements based on nonthermal nature of saturation. We conclude by devising a high-quality metasurface that can be used, in theory, to further reduce the saturation fluence below 50 nJ/cm2.

We demonstrate all-optical switching of high quality factor quasibound states in the continuum resonances in broken symmetry GaAs metasurfaces. By slightly breaking the symmetry of the GaAs nanoresonators, we enable leakage of symmetry protected bound states in the continuum (BICs) to free space that results in sharp spectral resonances with high quality factors of ∼500. We tune the resulting quasi-BIC resonances with ultrafast optical pumping at 800 nm and observe a 10 nm spectral blue shift of the resonance with pump fluences of less than 100 μJ cm-2. The spectral shift is achieved in an ultrafast time scale (<2.5 ps) and is caused by a shift in the refractive index mediated by the injection of free carriers into the GaAs resonators. An absolute reflectance change of 0.31 is measured with 150 μJ cm-2. Our results demonstrate a proof-of-concept that these broken symmetry metasurfaces can be modulated or switched at ultrafast switching speeds with higher contrast at low optical fluences (<100 μJ cm-2) than conventional Mie-metasurfaces.

In this work we show our results on the harmonic generation and nonlinear frequency mixing enhanced by Mie modes in GaAs metasurfaces. Moreover, we show enhancement and directionality control of the quantum dot emission embedded in the metasurface.

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Terahertz (THz) photoconductive devices are used for generation, detection, and modulation of THz waves, and they rely on the ability to switch electrical conductivity on a subpicosecond time scale using optical pulses. However, fast and efficient conductivity switching with high contrast has been a challenge, because the majority of photoexcited charge carriers in the switch do not contribute to the photocurrent due to fast recombination. Here, we improve efficiency of electrical conductivity switching using a network of electrically connected nanoscale GaAs resonators, which form a perfectly absorbing photoconductive metasurface. We achieve perfect absorption without incorporating metallic elements, by breaking the symmetry of cubic Mie resonators. As a result, the metasurface can be switched between conductive and resistive states with extremely high contrast using an unprecedentedly low level of optical excitation. We integrate this metasurface with a THz antenna to produce an efficient photoconductive THz detector. The perfectly absorbing photoconductive metasurface opens paths for developing a wide range of efficient optoelectronic devices, where required optical and electronic properties are achieved through nanostructuring the resonator network.

We use GaAs metasurfaces with (111) crystal orientation to channel the second harmonic generation (SHG) into the zero-diffraction order that is suppressed for SHG obtained from GaAs metasurfaces with (100) orientation.

We demonstrate ultrafast tuning of Fano resonances in a broken symmetry III-V metasurface using optical pumping. The resonance is spectrally shifted by 10 nm under low pump fluences of < 100 uJ·cm-2.

A frequency mixer is a nonlinear device that combines electromagnetic waves to create waves at new frequencies. Mixers are ubiquitous components in modern radio-frequency technology and microwave signal processing. The development of versatile frequency mixers for optical frequencies remains challenging: such devices generally rely on weak nonlinear optical processes and, thus, must satisfy phase-matching conditions. Here we utilize a GaAs-based dielectric metasurface to demonstrate an optical frequency mixer that concurrently generates eleven new frequencies spanning the ultraviolet to near-infrared. The even and odd order nonlinearities of GaAs enable our observation of second-harmonic, third-harmonic, and fourth-harmonic generation, sum-frequency generation, two-photon absorption-induced photoluminescence, four-wave mixing and six-wave mixing. The simultaneous occurrence of these seven nonlinear processes is assisted by the combined effects of strong intrinsic material nonlinearities, enhanced electromagnetic fields, and relaxed phase-matching requirements. Such ultracompact optical mixers may enable a plethora of applications in biology, chemistry, sensing, communications, and quantum optics.

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All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. We study second harmonic generation from broken symmetry metasurfaces made from III-V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.

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Here, we report on the results of theoretical and experimental studies of photoluminescense of silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied samples, the type of plasmonic mode is determined by the filling ratio of a one-dimensional array of gold stripes which covers the thin film with silicon nanocrystals on a quartz substrate. We analyze the extinction, photoluminesce spectra and decay kinetics of silicon nanocrystals and show that the incident and emitted light is coupled to the corresponding plasmonic mode. We demonstrate the modification of the extinction and photoluminesce spectra under the transition from wide to narrow gold stripes. The experimental extinction and photoluminescense spectra are in good agreement with theoretical calculations performed by the rigorous coupled wave analysis. Finally, we study the contribution of individual silicon nanocrystals to the overall photoluminescense intensity, depending on their spacial position inside the structure.

We use broken symmetry III-V semiconductor Fano metasurfaces to substantially improve the efficiency of second-harmonic generation (SHG) in the near infrared, compared to SHG obtained from metasurfaces created using symmetrical Mie resonators.

In this work, we experimentally demonstrate simultaneous occurrence of second-,third-, fourth-harmonic generation, sum-frequency generation, four-wave mixing and six-wave mixing processes in III-V semiconductor metasurfaces with spectra spanning from the UV to the near-IR.

We experimentally demonstrate resonantly enhanced nonlinear optical processes such as 2nd-, 3rd-, and 4th-harmonic generations, sum-frequency generation, four-wave mixing processes, etc., in the visible and near-IR using GaAs dielectric metasurfaces.

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Using III-V dielectric metasurfaces, we experimentally demonstrate resonantly enhanced harmonic generations up to the 4th order. Moreover, we observe large enhancements and spectral tailoring of the photoluminescence of quantum dots embedded inside dielectric metasurfaces. © OSA 2017.