Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+TM RFSoC Field-Programmable Gate Array under Proton Irradiation IEEE Radiation Effects Data Workshop Davis, Philip D.; Lee, David S.; Learn, Mark W.; Thorpe, Douglas E. This study examines the single-event upset and single-event latch-up susceptibility of the Xilinx 16nm FinFET Zynq UltraScale+ RFSoC FPGA in proton irradiation. Results for SEU in configuration memory, BlockRAM memory, and device SEL are given. Hide Abstract More Details TYPE Conference Poster YEAR 2019 ScopusOSTIDOI
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation Davis, Philip D.; Lee, David S.; Learn, Mark W.; Thorpe, Douglas E. Abstract not provided. More Details TYPE Conference Poster YEAR 2019 OSTIDOI
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation Davis, Philip D.; Lee, David S.; Learn, Mark W.; Thorpe, Douglas E. Abstract not provided. More Details TYPE Conference Poster YEAR 2019 OSTIDOI