Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+TM RFSoC Field-Programmable Gate Array under Proton Irradiation
IEEE Radiation Effects Data Workshop
This study examines the single-event upset and single-event latch-up susceptibility of the Xilinx 16nm FinFET Zynq UltraScale+ RFSoC FPGA in proton irradiation. Results for SEU in configuration memory, BlockRAM memory, and device SEL are given.