Publications

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This paper, the first of two parts, reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitry and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (∼10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. A constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. The limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated. [2015-0035].

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A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300degC). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000deg C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can withstand elevated temperatures. We circumvented these issues by developing sensing structures directly on SiC wafers using SiC and aluminum nitride (A1N), a high temperature capable piezoelectric material, thin films.

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Fully integrated switchable filter have been successfully demonstrated using a ra CMOS SOI process in conjunction with an a (AlN) microresonator process. Single pole-mul were developed in the CMOS SOI process th multi-project wafer runs while the filters were aluminum nitride based microresonators. Each concurrent design cycles and was demonstrated to integration. After design improvements to bo full monolithic integration was implem microresonator filters with the CMOS switc compatibility of the two technologies. A four ch switchable bank of 7MHz bandwidth filters demonstrated exhibiting approximately 8 dB of 60dB of stop band rejection. © 2012 IEEE.

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This work demonstrates a lateral overtone bulk acoustic resonator (LOBAR), which consists of an aluminum nitride (AlN) transducer coupled to a suspended thin silicon carbide (SiC) film fabricated using standard CMOS-compatible processes. The LOBAR design allows for high transduction efficiency and quality factors, by decoupling the transduction and energy storage schemes in the resonator. The frequency and bandwidth of the resonator were lithographically defined and controlled. A LOBAR operating at 2.93GHz with a Q greater than 100,000 in air was fabricated and characterized, having the highest reported f×Q product of any acoustic resonator to date.

Microsystem-Enabled Photovoltaic (MEPV) cells allow solar PV systems to take advantage of scaling benefits that occur as solar cells are reduced in size. We have developed MEPV cells that are 5 to 20 microns thick and down to 250 microns across. We have developed and demonstrated crystalline silicon (c-Si) cells with solar conversion efficiencies of 14.9%, and gallium arsenide (GaAs) cells with a conversion efficiency of 11.36%. In pursuing this work, we have identified over twenty scaling benefits that reduce PV system cost, improve performance, or allow new functionality. To create these cells, we have combined microfabrication techniques from various microsystem technologies. We have focused our development efforts on creating a process flow that uses standard equipment and standard wafer thicknesses, allows all high-temperature processing to be performed prior to release, and allows the remaining post-release wafer to be reprocessed and reused. The c-Si cell junctions are created using a backside point-contact PV cell process. The GaAs cells have an epitaxially grown junction. Despite the horizontal junction, these cells also are backside contacted. We provide recent developments and details for all steps of the process including junction creation, surface passivation, metallization, and release.

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Thin and small form factor cells have been researched lately by several research groups around the world due to possible lower assembly costs and reduced material consumption with higher efficiencies. Given the popularity of these devices, it is important to have detailed information about the behavior of these devices. Simulation of fabrication processes and device performance reveals some of the advantages and behavior of solar cells that are thin and small. Three main effects were studied: the effect of surface recombination on the optimum thickness, efficiency, and current density, the effect of contact distance on the efficiency for thin cells, and lastly the effect of surface recombination on the grams per Watt-peak. Results show that high efficiency can be obtained in thin devices if they are well-passivated and the distance between contacts is short. Furthermore, the ratio of grams per Watt-peak is greatly reduced as the device is thinned.

We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.

We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.