Publications

Ho, Pauline H.; Kottenstette, Richard K.; Stiles, Linda L.; Jackson, Nancy B.

Abstract not provided.

Kottenstette, Richard K.; Ho, Pauline H.

Abstract not provided.

Ho, Pauline H.

Abstract not provided.

Ho, Pauline H.

Abstract not provided.

Ho, Pauline H.

Abstract not provided.

Ho, Pauline H.

Abstract not provided.

Musson, Lawrence M.; Schmidt, Rodney C.; Ho, Pauline H.; Plimpton, Steven J.

Chemically Induced Surface Evolution with Level-Sets--ChISELS--is a parallel code for modeling 2D and 3D material depositions and etches at feature scales on patterned wafers at low pressures. Designed for efficient use on a variety of computer architectures ranging from single-processor workstations to advanced massively parallel computers running MPI, ChISELS is a platform on which to build and improve upon previous feature-scale modeling tools while taking advantage of the most recent advances in load balancing and scalable solution algorithms. Evolving interfaces are represented using the level-set method and the evolution equations time integrated using a Semi-Lagrangian approach [1]. The computational meshes used are quad-trees (2D) and oct-trees (3D), constructed such that grid refinement is localized to regions near the surface interfaces. As the interface evolves, the mesh is dynamically reconstructed as needed for the grid to remain fine only around the interface. For parallel computation, a domain decomposition scheme with dynamic load balancing is used to distribute the computational work across processors. A ballistic transport model is employed to solve for the fluxes incident on each of the surface elements. Surface chemistry is computed by either coupling to the CHEMKIN software [2] or by providing user defined subroutines. This report describes the theoretical underpinnings, methods, and practical use instruction of the ChISELS 1.0 computer code.

Griffith, Richard O.; Brown, Gary S.; Betty, Rita B.; Tucker, Mark D.; Ramsey, James L.; Brockmann, John E.; Lucero, Daniel A.; Mckenna, Sean A.; Peyton, Chad E.; Einfeld, Wayne E.; Ho, Pauline H.

The Bio-Restoration of Major Transportation Facilities Domestic Demonstration and Application Program (DDAP) is a designed to accelerate the restoration of transportation nodes following an attack with a biological warfare agent. This report documents the technology development work done at SNL for this DDAP, which include development of the BROOM tool, an investigation of surface sample collection efficiency, and a flow cytometry study of chlorine dioxide effects on Bacillus anthracis spore viability.

Griffith, Richard O.; Brown, Gary S.; Tucker, Mark D.; Ramsey, James L.; Brockmann, John E.; Lucero, Daniel A.; Mckenna, Sean A.; Peyton, Chad E.; Einfeld, Wayne E.; Ho, Pauline H.

In February of 2005, a joint exercise involving Sandia National Laboratories (SNL) and the National Institute for Occupational Safety and Health (NIOSH) was conducted in Albuquerque, NM. The SNL participants included the team developing the Building Restoration Operations and Optimization Model (BROOM), a software product developed to expedite sampling and data management activities applicable to facility restoration following a biological contamination event. Integrated data-collection, data-management, and visualization software improve the efficiency of cleanup, minimize facility downtime, and provide a transparent basis for reopening. The exercise was held at an SNL facility, the Coronado Club, a now-closed social club for Sandia employees located on Kirtland Air Force Base. Both NIOSH and SNL had specific objectives for the exercise, and all objectives were met.

Proposed for publication in Journal of Micro-Electro-Mechanical Systems.

Ho, Pauline H.; Jorgensen, Craig R.; Plimpton, Steven J.; Schmidt, Rodney C.; Yarberry, Victor R.

Abstract not provided.

Ho, Pauline H.; Johannes, Justine E.; Buss, Richard J.

As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that describe the gas-phase and surface chemistry occurring during the fluorocarbon plasma etching of silicon dioxide and related materials. The fluorocarbons examined are C{sub 2}F{sub 6}, CHF{sub 3} and C{sub 4}F{sub 8}, while the materials studied are silicon dioxide, silicon, photoresist, and silica-based low-k dielectrics. These systems were examined at different levels, ranging from in-depth treatment of C{sub 2}F{sub 6} plasma etch of oxide, to a fairly cursory examination of C{sub 4}F{sub 8} etch of the low-k dielectric. Simulations using these reaction mechanisms and AURORA, a zero-dimensional model, compare favorably with etch rates measured in three different experimental reactors, plus extensive diagnostic absolute density measurements of electron and negative ions, relative density measurements of CF, CF{sub 2}, SiF and SiF{sub 2} radicals, ion current densities, and mass spectrometric measurements of relative ion densities.

Pawlowski, Roger P.; Salinger, Andrew G.; Habermehl, Scott D.; Ho, Pauline H.

Abstract not provided.

Van Den Avyle, James A.; Ho, Pauline H.

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from silicon melts using reactive gas blowing with 0{sub 2} and Cl{sub 2}. The same authors later reassessed their data and the literature, and concluded that Cl{sub 2}and 0{sub 2}/Cl{sub 2} gas blowing are only effective for removing Al, Ca, and Mg from the silicon melt. Researchers from Kawasaki Steel Corp. reported removal of B and C from silicon melts using reactive gas blowing with an 0{sub 2}/Ar plasma torch. Processes that purify the silicon melt are believed to be potentially much lower cost compared to present production methods that purify gas species.

Ho, Pauline H.

A reaction mechanism for TEOS/O{sub 3} CVD in a SVG/WJ atmospheric pressure furnace belt reactor has been developed and calibrated with experimental deposition rate data. One-dimensional simulations using this mechanism successfully reproduce the trends observed in a set of 31 experimental runs in a WJ-TEOS999 reactor. Two-dimensional simulations using this mechanism successfully reproduce the average deposition rates for 3 different experimental conditions in a WJ-1500TF reactor, although the deposition profiles predicted by the model are flatter than the experimental static prints.