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Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation
Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved the electrical characteristics, with an optimal NO/O{sub 2} mixture in the range of 10% to 25% NO. Re-oxidation by RTP improves the electrical characteristics with respect to the films that were not re-oxidized and produces only slight changes in the N distribution or maximum concentration. The electrical results also indicate that oxynitride films are superior to comparably grown oxide films.
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