Publications

Smith, Paul M.

Abstract not provided.

Morales, Alfredo M.; Franco, David O.; Haroldsen, Brent L.; Ammerlahn, Heidi R.; Moen, Christopher D.; Smith, Paul M.; Phelan, James M.; Speed, Ann S.; Hilton, Nathan R.; Aldridge, Chris D.; Jortner, Jeffrey N.

Abstract not provided.

Smith, Paul M.

Abstract not provided.

Smith, Paul M.

Abstract not provided.

AIChE Annual Meeting, Conference Proceedings

Johannes, Justine E.; Dimos, Duane B.; Stinnett, Regan W.; Smith, Paul M.

Abstract not provided.

Smith, Paul M.

Abstract not provided.

Smith, Paul M.

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Smith, Paul M.

Abstract not provided.

Smith, Paul M.

Abstract not provided.

Smith, Paul M.

Abstract not provided.

Everist, Sarah C.; Meisenheimer, Timothy L.; Smith, Paul M.

Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved the electrical characteristics, with an optimal NO/O{sub 2} mixture in the range of 10% to 25% NO. Re-oxidation by RTP improves the electrical characteristics with respect to the films that were not re-oxidized and produces only slight changes in the N distribution or maximum concentration. The electrical results also indicate that oxynitride films are superior to comparably grown oxide films.