The overarching goal of this Truman LDRD project was to explore mechanisms of thermal transport at interfaces of nanomaterials, specifically linking the thermal conductivity and thermal boundary conductance to the structures and geometries of interfaces and boundaries. Deposition, fabrication, and post possessing procedures of nanocomposites and devices can give rise to interatomic mixing around interfaces of materials leading to stresses and imperfections that could affect heat transfer. An understanding of the physics of energy carrier scattering processes and their response to interfacial disorder will elucidate the potentials of applying these novel materials to next-generation high powered nanodevices and energy conversion applications. An additional goal of this project was to use the knowledge gained from linking interfacial structure to thermal transport in order to develop avenues to control, or 'tune' the thermal transport in nanosystems.
Continued reduction of characteristic dimensions in nanosystems has given rise to increasing importance of material interfaces on the overall system performance. With regard to thermal transport, this increases the need for a better fundamental understanding of the processes affecting interfacial thermal transport, as characterized by the thermal boundary conductance. When thermal boundary conductance is driven by phononic scattering events, accurate predictions of interfacial transport must account for anharmonic phononic coupling as this affects the thermal transmission. In this paper, a new model for phononic thermal boundary conductance is developed that takes into account anharonic coupling, or inelastic scattering events, at the interface between two materials. Previous models for thermal boundary conductance are first reviewed, including the Diffuse Mismatch Model, which only consdiers elastic phonon scattering events, and earlier attempts to account for inelastic phonon scattering, namely, the Maximum Transmission Model and the Higher Harmonic Inelastic model. A new model is derived, the Anharmonic Inelastic Model, which provides a more physical consideration of the effects of inelastic scattering on thermal boundary conductance. This is accomplished by considering specific ranges of phonon frequency interactions and phonon number density conservation. Thus, this model considers the contributions of anharmonic, inelastically scattered phonons to thermal boundary conductance. This new Anharmonic Inelastic Model shows excellent agreement between model predictions and experimental data at the Pb/diamond interface due to its ability to account for the temperature dependent changing phonon population in diamond, which can couple anharmonically with multiple phonons in Pb.
This model predicts thermal boundary conductance at interfaces where one material comprising the junction is characterized by high elastic anisotropy (i.e, graphite). The thermal properties of graphite are determined through a simplified vibrational model, where the bulk structure is treated as an linear assembly of two-dimensional systems. This model is validated at temperatures above cryogenic through comparison to experimentally determined values of specific heat. Elastic processes are accounted for through traditional diffuse transport theory. Inelastic contributions due to multi-phonon processes are also addressed and quantified.
Electron-interface scattering during electron-phonon nonequilibrium in thin films creates another pathway for electron system energy loss as characteristic lengths of thin films continue to decrease. As power densities in nanodevices increase, excitations of electrons from sub-conduction-band energy levels will become more probable. These sub-conduction-band electronic excitations significantly affect the material's thermophysical properties. In this work, the effects of d-band electronic excitations are considered in electron energy transfer processes in thin metal films. In thin films with thicknesses less than the electron mean free path, ballistic electron transport leads to electron-interface scattering. The ballistic component of electron transport, leading to electron-interface scattering, is studied by a ballistic-diffusive approximation of the Boltzmann Transport Equation. The effect of d-band excitations on electron-interface energy transfer is analyzed during electron-phonon nonequilibrium after short pulsed laser heating in thin films.
High-power electronics are central in the development of radar, solid-state lighting, and laser systems. Large powers, however, necessitate improved heat dissipation as heightened temperatures deleteriously affect both performance and reliability. Heat dissipation, in turn, is determined by the cascade of energy from the electronic to lattice system. Full characterization of the transport then requires analysis of each. In response, this four-month late start effort has developed a transient thermoreflectance (TTR) capability that probes the thermal response of electronic carriers with 100 fs resolution. Simultaneous characterization of the lattice carriers with this electronic assessment was then investigated by equipping the optical arrangement to acquire a Raman signal from radiation discarded during the TTR experiment. Initial results show only tentative acquisition of a Raman response at these timescales. Using simulations of the response, challenges responsible for these difficulties are then examined and indicate that with outlined refinements simultaneous acquisition of TTR/Raman signals remains attainable in the near term.