Photonic Integrated Chips for Compact Atomic Clocks
Abstract not provided.
Publications
Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems
Abstract not provided.
Dependence of Critical Electric Field on Semiconductor Bandgap - An Analytical Study
Abstract not provided.
Electromagnetic Pulse – Resilient Electric Grid for National Security: Research Program Executive Summary
Sandia National Laboratories sponsored a three-year internally funded Laboratory Directed Research and Development (LDRD) effort to investigate the vulnerabilities and mitigations of a high-altitude electromagnetic pulse (HEMP) on the electric power grid. The research was focused on understanding the vulnerabilities and potential mitigations for components and systems at the high voltage transmission level. Results from the research included a broad array of subtopics, covered in twenty-three reports and papers, and which are highlighted in this executive summary report. These subtopics include high altitude electromagnetic pulse (HEMP) characterization, HEMP coupling analysis, system-wide effects, and mitigating technologies.
Reliability Studies of Wide-Bandgap Power Semiconductor Devices Under Realistic Stress Conditions
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride for High-Performance Power-Switching and Radio-Frequency Devices (invited)
Abstract not provided.
Hard-switching reliability studies of 1200 v vertical GaN PiN diodes
MRS Communications
We report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current-voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.
Hard-switching Reliability Studies of Vertical GaN 1200 V PiN Diodes
Abstract not provided.
Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes
Abstract not provided.
Hard-Switching Reliabiity Studies of 1200 V Vertical GaN PiN Diodes
Abstract not provided.
Switching Reliability of GaN PiN Diodes
Abstract not provided.
Switching Reliability Characterization of Vertical GaN PiN Diodes
Abstract not provided.
Switching Reliability Characterization of Vertical GaN PiN Diodes
Abstract not provided.
14 Results